*原装* 咨询 MOSFET, P, TO-263
Transistor T*e:MOSFET; Transistor Polarity:P; Voltage, Vds T*:100V; Current, Id Cont:6.8A; Resistance, Rds On:0.48ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th T*:-4V; Case Style:D2-PAK; Termination T*e:SMD; Capacitance, Ciss T*:350pF; Case Style, Alternate:D2-PAK; Charge, Gate N-channel:27nC; Current, Iar:4.0A; Current, Idm Pulse:27A; Current, Idss Max:25µA; Depth, External:15.49mm; Energy, Avalanche Repetitive Ear:4.8mJ; Energy, Avalanche Single Pulse Eas:140mJ; Length / Height, External:4.69mm; Marking, SMD:IRF9520NS; Power Dissipation:48W; Power Dissipation, on 1 Sq. PCB:3.8W; Power, Pd:48W; Resistance, Rds on @ Vgs = 10V:0.48ohm; Temperature, Current:25°C; Temperature, Full Power Rating:25°C; Temperature, Tj Max:175°C; Temperature, Tj Min:-55°C; Thermal Resistance, Junction to Case A:3.1°C/W; Time, Fall:31ns; Time, Rise:47ns; Time, trr T*:100ns; Transistors, No. of:1; Voltage, Vgs th Max:-4V; Voltage, Vgs th Min:-2V
Category: Transistors >> MOSFET >> 

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