Perkinelmer Excelitas传感器
热释电红外传感器：LHI778 LHI878 LHI968 LHI958 LHI874 LHI1148 LHI548 LHI908 LHI548 LHI906 LHI1128 LHI807 LHI944 PYD1096 PYD1388 PYD1398 PYD5131 PYD5731 PYQ1098 PYQ1398 PYQ1488 PYQ2898 PYQ5868 PYS3228 PYS3428 PYS3798 PYS3828 PYS4198
紫外线传感器：VTB5051UVVTB6061UVPYS3228TC/G2 PYS3228TC-G5/G20 UV10T2E10F JEC0.1 UV10SFUV10SUTB5051 UTB5051B UV10T2E10F UV10T2E10L
光电传感器：TP-IRL715
热电堆红外测温传感器：TPS333 TPS334 TPS434 TPS534 TPS535TPD1T0226IRA/3136 TPS336IRA/3136 TPD1T0216L5.5/3238 TPD1T0222/3500 TPS332/3500 TPD1T0122/3214 TPS232/3214 TPiD23B TPS23B TPD1T0224 TPD1T0214/3161 TPS334/3161 TPD1T1254 TPD1T252OTP538U OTP537F2 J11F5.5 K1C1F5.5 TS118-3
日本尼赛拉传感器：
热释电红外传感器： KP500B KP506B RE200B RE03B RE46B RE431B KB632-P D203S D203B KB632
红外处理IC： BISS0001 LP8072 CSC9803 LM324 LP0001 Eudyna/FUJITSU

1、详细资料目录/应用资料   2、 应用图文简介1  3、应用选择资料2  4、应用选择资料3

5、FUJITSU/EUDYNA公司详细产品资料目录手册/应用资料 

FUJITSU富士通已经与SUMITOMO住友电气工业达成成立一间专注于化合物半导体业务的合资企业优迪那半导体有限公司EUDYNA的决议。 这份决议将整和以及巩固富士通旗下的全资子公司富士通量子器件株式会社与住友电气工业两家公司的化合物半导体电子器件业务。富士通与住友电气工业将各占这间合资企业50％的股份。
这间新的合资公司优迪那半导体有限公司将专注于研究开发, 制造和销售覆盖各种用途的化合物半导体器件, 并致力于成长为这个领域科技发展的*, 以*地建立*客户的信任.
               Optical Semiconductors 
               激光二*管模块 
               光电二*管探测器与光接收器模块 
               光收发器模块
               可视激光二*管
               微波器件
Sumitomo 住友电气工业设计、生产并销售基于GaAs技术制成的组件、集成电路和模块产品。电子设备部门（EDD）专注于Ⅲ－Ⅳ组件产业，供应*和优良的产品，用于光纤通讯系统的前端模拟电路，并可提供给客户多样化的标准产品。现今，本公司已可提供10Gb/s SONET/SDH/ATM的丰富产品系列；而基于InP的40Gb/s IC也在*发展中，很快也将被列入我们的产品系列之中。本公司生产无线及光纤产品，以及专注于包含了epitaxial water process技术的行动／无线基站经营，顾客可选择采用以离子注入（Ion-implantation）及Epitaxial组件技术为本的多种GaAs M*FET 制作法.
        光纤产品GaAs IC 
               F01 Series 前置放大器IC  
               F03 Series 限制放大器IC  
               F05 Series LD驱动IC  
               F06 Series LED驱动IC  
              F08 Series PD/APD前置放大器模
        无线产品GaAs IC 
              P01 Series 中等功率FET  
              P04 Series PDC/GSM/AMPS基站/推进器  
              P05 Series PHS基站  
              P06 Series CDMA/PCS基站

砷化镓FET芯片和HEMT芯片

--通用砷化镓场效应晶体管(FET)芯片

--低噪音高电子迁移率晶体管(HEMT)芯片

*噪音已封装HEMT

--*噪音已封装高电子迁移率晶体管(HEMT)

分立砷化镓FET

--通用砷化镓场效应晶体管(FET)

--移动通信用L波段高功率砷化镓场效应晶体管(FET)

--通用功率砷化镓场效应晶体管(FET)芯片

内部匹配型功率FET

--低失真内部匹配型砷化镓场效应晶体管(FET)

砷化镓MMIC

--移动通信用单片微波集成电路(MMIC)驱动放大器

--14GHz波段VSAT用单片微波集成电路(MMIC)功率放大器

--准毫米波单片微波集成电路(MMIC)

--直播卫星(DBS)用单片微波集成电路(MMIC)

--砷化镓微波分频器(Prescalar)集成电路

GaAs FET Chips and HEMT Chips

GaAs FET Chips for General Purpose Applications

Part Number Output Power at 1dB G.C.P P 1dB (t*) (dBm) Power Gain at 1dB G.C.P G 1dB (t*) (dB) Power-added Efficiency η add (t*) (%) frequency f (GHz) Drain Source Voltage V DS (V) Drain Source Current I DS (mA) Chip T*e Frequency Band FLC087XP 28.5 7.0 31.5 8.0 10 180 XP C FLC157XP 31.5 6.0 29.5 8.0 10 360 XP FLC307XP 34.8 9.5 37.0 4.0 10 720 XP FSX017X 21.5 11.0 42.0 8.0 8 38 X X FSX027X 24.5 10.0 41.0 8.0 8 77 X FLX257XV 33.5 7.5 31.0 10.0 10 600 XV FLK017XP 20.5 8.0 26.0 14.5 10 36 XP Ku FLK027XV * 24.0 7.0 32.0 14.5 10 60 XP/XV FLK057XV 27.0 7.0 32.0 14.5 10 120 XV FLK107XV 30.0 6.5 31.0 14.5 10 240 XV FLK207XV 32.5 6.0 27.0 14.5 10 480 XV

X Conventional XP Plated Heat Sink XV Via Hole PHS 　 * : XP also available

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HEMT Chips for Low Noise Applications

Part Number Noise Figure NF (t*) (dB) Associated Gain Gas (t*) (dB) frequency f (GHz) Drain Source Voltage V DS (V) Drain Source Current I DS (mA) Frequency Band FHX04X 0.75 10.5 12.0 2 10 X/Ku FHX05X 0.9 10.5 12.0 2 10 FHX06X 1.10 10.5 12.0 2 10 FHX13X 0.45 13.0 12.0 2 10 FHX14X 0.55 13.0 12.0 2 10 FHX35X 1.20 10.0 12.0 3 10 FHX45X 0.55 12.0 12.0 2 10 FHR02X 1.0 9.0 18.0 2 10 K FHR20X 0.75 10.0 18.0 2 5

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Super Low Noise Packaged HEMTs

Super Low Noise Packaged HEMT (High Electron Mobility Transistor)

Part Number Noise Figure NF (t*) (dB) Associated Gain Gas (t*) (dB) frequency f (GHz) Drain Source Voltage V DS (V) Drain Source Current I DS (mA) Package T*e Frequency Band FH*0LG 0.30 15.5 4.0 2 10 LG C FHX13LG 0.45 13.0 12.0 2 10 LG X/Ku FHX14LG 0.55 13.0 12.0 2 10 LG FHX04LG 0.75 10.5 12.0 2 10 LG FHX05LG 0.90 10.5 12.0 2 10 LG FHX06LG 1.10 10.5 12.0 2 10 LG FHX35LG 1.20 10.0 12.0 3 10 LG

Tc(op) = +25C, All measurement values are shown as standard values Note: FSU01LG, FSU02LG, and FSX017LG devices are short lead.

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Discrete GaAs FETs

General Purpose GaAs FET

Part Number Test Condition1 Output power at 1dB G.C.P P 1dB (dBm) Power Gain at 1dB G.C.P G 1dB (dB) Test Condition2 Noise Figure NF Condition2 Associated Gain Gas Condition2 Package Application FSU01LG f=2GHz V DS =6V I DS =40mA 20 19 f=2GHz V DS =3V I DS =10mA 0.55 18.5 LG Medium Power Amplifier FSU02LG f=2GHz V DS =6V I DS =80mA 23 17 f=2GHz V DS =3V I DS =20mA 1.5 17.5 LG FSX027WF f=8GHz V DS =8V I DS =77mA 24.5 10 - - - WF FSX017WF f=8GHz V DS =8V I DS =39mA 21.5 11 - - - WF FSX56LP f=10GHz V DS =3V I DS =30mA 15 6 - - - LP BS Oscillator FSX017LG f=12GHz V DS =4V I DS =30mA 16 8 - - - LG Medium Power Amplifier

*1: Internally matched t*e; *2: Push-pull FET t*e; *3: Pout; *4: GL (*all signal gain); *5: I DS (DC) Note: Tc = +25C. All measurement values are shown as standard values.

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L-band GaAs-FET for Mobile Communication System

Part number Band Output Power at 1dB G.C.P P 1dB Power Gain at 1dB G.C.P G 1dB Power Added Efficiency η add (%) frequency f (GHz) Drain-Source Voltage V DS (V) Drain Current I DS (mA) Thermal Resistance (癈/W) package t*e Feature. Application FLU10XM L 29.5 13.5 47 2 10 180 25 XM High gain, surface mount package FLU17XM 32.5 12.5 46 2 360 15 FLU35XM 35.5 11.5 46 2 720 7.5 FLL107ME 29.5 13.5 47 2.3 180 25 ME High gain High Output Amplifier FLL177ME 32.5 12.5 46 2.3 360 15 FLL357ME 33.5 11.5 46 2.3 720 7.5 FLL57MK 36 11.5 37 2.3 990 6.2 MK FLL120MK 40 10.0 40 2.3 2200 3.3 FLL200IB-1 *1 42.5 13.0 35 1.5 4800 1.6 IB FLL200IB-2 *1 42.5 11.0 34 2.3 4800 1.6 FLL200IB-3 *1 42.5 11.0 34 2.6 4800 1.6 FLL300IL-1 44.5 13.0 45 0.9 6000 1.0 IL FLL300IL-2 44.5 12.0 44 1.8 6000 1.0 FLL300IL-3 44.5 10.0 42 2.6 6000 1.0 FLL300IP-4 *2 44.5 8.0 40 3.6 6000 *5 1.0 IP Push-pull t*e. High gain, high output amplifier FLL310IQ-3A *2 45.0 9.0 40 2.7 7000 1.0 IQ FLL400IP-2 *2 45.5 10.0 44 1.96 12 2000 *5 1.0 IP FLL400IP-3 *2 45.5 9.0 43 2.5 2000 *5 1.0 FLL600IQ-2 *2 48 10.5 43 1.96 4000 *5 0.8 IQ FLL600IQ-2C *2 48.0 *3 12.0 *4 51 2.17 1500 *5 0.8 FLL600IQ-3 *2 48.0 10.0 43 2.7 4000 *5 0.8 FLL800IQ-2C *2 49.0 *3 11.0 *4 50 2.17 2000 *5 0.8 FLL810IQ-3C *2 49.0 *3 12.0 *4 50 2.6 5000 0.8 FLL810IQ-4C *2 49.0 *3 9.5 *4 45 3.6 5000 0.8 FLL1200IU-2 *2 50.8 *3 11.0 *4 44 1.96 5000 0.6 IU FLL1200IU-3 *2 50.8 *3 11.0 *4 44 2.5 5000 0.6 FLL1500IU-2C *2 51.8 *3 12.0 *4 48 2.17 4000 *5 0.55 FLL2400IU-2C *2 53.8 *3 11.5 *4 - 2.17 6000 *5 0.45

*1 : Input Matched

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General Purpose Power GaAs-FET

Part Number Output Power at 1dB G.C.P P 1dB (t*) (dBm) Power Gain at 1dB G.C.P G 1dB (t*) (dB) Power-added Efficiency η add (t*) (%) frequency f (GHz) Drain Source Voltage V DS (V) Drain Source Current I DS (mA) Thermal Resistance R th (t*) (癈/W) Package T*e Frequency Band FLC057WG 27.0 9.0 38.0 8.0 10 120 27 WG C FLC097WF 28.8 8.5 35.0 6.0 10 180 25 WF FLC107WG 30.0 8.0 36.0 8.0 10 240 16 WG FLC167WF 31.8 7.5 35.0 6.0 10 360 15 WF FLC257MH-6 *1 34.0 9.0 36.0 6.4 10 600 8 MH FLC257MH-8 *1 34.0 8.0 35.0 8.5 10 600 8 MH FLC317MG-4 *1 34.8 9.5 37.0 4.2 10 720 8 MG FLX107MH-12 *1 30.0 7.5 33.0 12.5 10 240 15 MH X FLX207MH-12 *1 32.5 7.0 28.0 12.5 10 480 10 MH FLK017WF 20.5 7.5 26.0 14.5 10 36 65 WF Ku FLK027WG 24.0 7.0 32.0 14.5 10 60 40 WG FLK057WG 27.0 7.0 32.0 14.5 10 120 20 WG FLK107MH-14 *1 30.0 6.5 31.0 14.5 10 240 15 MH FLK207MH-14 *1 32.5 6.0 27.0 14.5 10 480 10 MH

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Low Distortion Internally Matched GaAs-FET Characteristics

Part Number Band 3rd Order Inter-modulation Distortion IM3 (dBc) Output Power at 1dB G.C.P P 1dB (dBm) Power Gain at 1dB G.C.P G 1dB (dB) Power added Efficiency Frequency f (GHz) Drain-Source Voltage V DS (V) Drain Current I DS (mA) Thermal Resistance (癈/W) Package Special Application FLM3135-4F FLM3135-8F FLM3135-12F FLM3135-18F S -45 -45 -45 -45 36.5 39.5 41.5 43 12 11 11.5 10.5 38 37 40 37 3.1~3.5 3.1~3.5 3.1~3.5 3.1~3.5 10 1100 2200 3400 4800 5 3 2.3 1.6 IB IB IK IK High output amplifier Impedance matched = 50Ω External circuit not required Each is designed for standard communication frequency band FLM3439-4F FLM3439-8F FLM3439-12F FLM3439-18F FLM3439-25F -46 -46 -46 -46 -46 36.5 39.5 41.5 43 44.5 12 11 11.5 10.5 10.5 38 37 40 37 41 3.4~3.9 3.4~3.9 3.4~3.9 3.4~3.9 3.4~3.9 1100 2200 3400 4800 6800 5 3 2.3 1.6 1.4 IB IB IK IK IK FLM3742-4F FLM3742-8F FLM3742-12F FLM3742-18F FLM3742-25F C -46 -46 -46 -46 -46 36.5 39.5 41.5 43 44.5 12 11 11.5 10.5 10.5 38 37 40 37 41 3.7~4.2 3.7~4.2 3.7~4.2 3.7~4.2 3.7~4.2 1100 2200 3250 4800 6200 5 3 2.3 1.6 1.4 IB IB IK IK IK FLM4450-4F FLM4450-8F FLM4450-12F FLM4450-18F FLM4450-25F -46 -46 -46 -46 -46 36.5 39.5 41.5 43 44.5 11 10 10.5 9.5 9.5 37 36 39 36 40 4.4~5.0 4.4~5.0 4.4~5.0 4.4~5.0 4.4~5.0 1100 2200 3250 4800 6200 5 3 2.3 1.6 1.4 IB IB IK IK IK FLM5359-4F FLM5359-8F FLM5359-12F FLM5359-18F FLM5359-25F -46 -46 -46 -46 -46 36.5 39.5 41.5 43 44.5 10.5 9.5 9.5 8.5 8.5 37 36 38 35 39 5.3~5.9 5.3~5.9 5.3~5.9 5.3~5.9 5.3~5.9 1100 2200 3250 4800 6200 5 3 2.3 1.6 1.4 IB IB IK IK IK FLM5964-4F FLM5964-6F FLM5964-8F FLM5964-12F FLM5964-18F FLM5964-25F -46 -46 -46 -46 -46 -46 36.5 38.5 39.5 41.5 43 44.5 10 10 10 10 10 10 37 37 37 37 37 37 5.9~6.4 5.9~6.4 5.9~6.4 5.9~6.4 5.9~6.4 5.9~6.4 1100 1625 2200 3250 4875 6500 5 4 3 2.3 1.6 1.4 IB IB IB IK IK IK FLM5972-8F -45 39.0 8.5 31 5.9~7.2 2200 3.0 IB FLM6472-4F FLM6472-6F FLM6472-8F FLM6472-12F FLM6472-18F FLM6472-25F -46 -46 -46 -46 -46 -46 36.5 38.5 39.5 41.5 43 44.5 9.5 9.5 9.5 9.5 9.5 9.5 36 37 36 37 37 38 6.4~7.2 6.4~7.2 6.4~7.2 6.4~7.2 6.4~7.2 6.4~7.2 1100 1625 2200 3250 4875 6500 5 4 3 2.3 1.6 1.4 IB IB IB IK IK IK FLM7179-4F FLM7179-6F FLM7179-8F FLM7179-12F FLM7179-18F -46 -46 -46 -46 -46 36.5 38.5 39.5 41.5 42.5 9 9 9 9 8 35 34 35 38 30 7.1~7.9 7.1~7.9 7.1~7.9 7.1~7.9 7.1~7.9 1100 1625 2200 3250 4875 5 4 3 2.3 1.6 IB IB IB IK IK FLM7185-6F FLM7185-12F -45 -45 38.0 41.0 8 8 30 30 7.1~8.5 7.1~8.5 1625 3500 4 2.3 IB IK FLM7785-4F FLM7785-6F FLM7785-8F FLM7785-12F -46 -46 -46 -46 36.5 38.5 39.5 41.5 8.5 8.5 8.5 8.5 35 31 34 34 7.7~8.5 7.7~8.5 7.7~8.5 7.7~8.5 1100 1755 2200 3500 5 4 3 2.3 IB IB IB IK FLM8596-4F FLM8596-8F FLM8596-12F X, Ku -45 -45 -45 36.5 39.0 40.5 7.5 7.5 7.5 29 29 25 8.5~9.6 8.5~9.6 8.5~9.6 1100 2200 3600 5 3 2.3 IA IB IB FLM0910-3F FLM0910-4F FLM0910-8F -46 -46 -46 35 36 39 7.5 7.5 7.5 29 29 29 9.5~10.5 9.5~10.5 9.5~10.5 900 1100 2200 5 5 3 IA IA IB FLM1011-3F FLM1011-4F FLM1011-6F FLM1011-8F FLM1011-12F -46 -46 -45 -46 -45 35 36 37.5 39 40.5 7.5 7 7.5 7 6 29 29 28 29 25 10.7~11.7 10.7~11.7 10.7~11.7 10.7~11.7 10.7~11.7 900 1100 1800 2200 3600 5 5 4 3 2.3 IA IA IA IB IB FLM1213-4F FLM1213-6F FLM1213-8F FLM1213-12F -46 -45 -46 -45 36 37.5 39 40.5 6.5 7 6.5 5.5 28 27 28 24 12.7~13.2 12.7~13.2 12.7~13.2 12.7~13.2 1100 1800 2200 3600 5 4 3 2.3 IA IA IA IB FLM1314-3F FLM1314-6F -45 -45 35 37.5 5.5 5.5 25 22 13.75~14.5 13.75~14.5 900 1800 5 4 IA IA FLM1414-3F FLM1414-4F FLM1414-6F FLM1414-8F FLM1414-12F -46 -46 -46 -46 - 35 36 37.5 39 40.5 6.5 6 6.5 6 5 27 27 24 27 23 14.0~14.5 14.0~14.5 14.0~14.5 14.0~14.5 14.0~14.5 900 1100 1800 2200 3600 5 5 4 3 2.3 IA IA IA IA IB FLM1415-3F FLM1415-6F -45 -45 34.5 37 5.5 5.5 23 20 14.5~15.3 14.5~15.3 900 1800 5 4 IA IA

Note: Tc= +25C. All measurement values are shown as standard values.

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Driver Amplifier MMIC for Mobile Communication

Part Number frequecy f GHz Output power at 1dB G.C.P P 1dB dBm (t*.) *all signal gain G dB Gain Flatness ΔG dB (t*.) DC Input Current I DD / I GG mA Feature FMM5027VJ 0.8~3.0 26 19 2 220/2 broad band, high output FMM5046VF 2.2 36 30 - 1700/35 high output FMM5049VT 2.2 41 *1 33 - 2500/7 high output

Note *1 : Pout;

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Power Amplifier MMIC for 14GHz Band VSAT

Part Number frequecy f GHz Output power at 1dB G.C.P P 1dB dBm (t*.) Linear Gain G dB (t*.) Gain Flatness ΔG dB (t*.) FMM5010VF 14.0~14.5 21 25 1.0 FMM5017VF 14.0~14.5 29 20 1.0 FMM5007VF 14.0~14.5 31 20 1.0 FMM5522GJ 14.0~14.5 35 26 *1 2.0 *3 FMM5051VF 13.75~14.5 31.5 *2 31.5 1.5 FMM5048GJ 13.75~14.5 36 26 *1 3.0 *3

*1 : G1dB;   *2 : Pout (Pin=3dBm);   *3 : Maximum;

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Quasi Millimeter-Wave MMIC

Power Amplifier MMIC for VSAT Characteristics

T*e Frequency Range (GHz) 　 Drain Voltage V DD (V) Output Power at 1dB G.C.P P1dB (dBm) Power Gain at 1dB G.C.P G1dB (dB) Power Added Efficiency η add (%) FMM5802X 27.5~31.5 6 25.5 9 20 FMM5803X 27.5~30.0 30 *2 14 20 *2 30.0~31.5 12 FMM5804X 17.5~30.0 25 18 18 30.0~31.5 23 FMM5805X 17.5~20.0 31 21 30 FMM5806X 24.0~27.0 26 9.5 25 FMM5807X 21.0~24.0 29 14 *1 20 *1 24.0~27.0 30 FMM5815X 17.5~20.0 31 21 30 *3 FMM5816X 37.0~42.0 25 14 20

*1: f=21.0~24.0GHz (t*.),  *2: f=27.5~31.5GHz (t*.),  *3: ηadd at P1dB (All characteristic are t*ical value)

Quasi Millimeter-wave Power Amplifier (Package) Characteristics

T*e Frequency Range (GHz) 　 Drain Voltage V DD (V) Output Power at 1dB G.C.P P1dB (dBm) Power Gain at 1dB G.C.P G1dB (dB) Power Added Efficiency η add (%) FMM5805GJ-1 17.7~19.7 6 31 20 27 FMM5807GJ-1 21.2~23.6 29 13 18 FMM5815GJ-1 17.7~19.7 31 20 25 FMM5811GJ-1 17.7~23.6 24.5 15 20 FMM5815GJ-1 17.7~19.7 31 20 25

Quasi Millimeter-wave Low Noise Amplifier Characteristics

T*e Frequency Range (GHz) Drain Voltage VDD (V) Noise Figure NF (dB) Associated Gain Gas (dB) Chip Size (mm) FMM5701X 18~28 5 1.5 *1 13.5 *1 0.45 x 0.52 FMM5702X 27~32 4 1.6 *2 13 *2 0.96 x 0.96 FMM5703X 24~32 3 2 *3 18 *3 1.56 x 1.16 FMM5704X 36~40 3 2 *4 18 *4 1.46 x 1.06

K~Ka Band Converter MMIC (Chip) Characteristics

T*e Usable Frequency Range (GHz) Conversion Gain (dB) Associated Current (mA) Features FMM5116X 20~32 -8 140 Built-in frequency multiplier (times 2) FMM5117X -10

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MMIC for DBS (Direct Broadcast Satellite)

Down Converter MMIC for DBS FMM5107ML 　 FMM5107MLT4E1 Single Oscillator MMIC for DBS FMM5202ML Dual Oscillator MMIC for DBS FMM5201ML 　 FMM5201MLT4E1

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GaAs Microwave Frequency Divider (Prescalar) IC

Part Number Power Supply Current (t*.) I SS (mA) Operating Frequency Range f (GHz) Supply Voltage V DD (t*.) (V) Power Output Po (t*.) (dBm) Ambient Temp. Range (癈) Package FMM1061VJ * 120 2~6 5 4 -30 ~ +70 VJ FMM1062ML * 20 2~6 3 -4 -40 ~ +85 ML FMM106HG 140 2~6.5 5 4 -55 ~ +85 HG FMM1103VJ * 90 2~12 5 8 -40 ~ +85 VJ

Note * : Part are available in Tape and Reel.

　

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类型：生产制造商

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