isc/iscsemi/2SB1402
放大
小功率
高频
PNP型
TO-220Fa
塑料封装
3(A)
3(W)
厂家直销
新品
扩散型
企业名:无锡固电半导体股份有限公司
类型:生产制造商
电话: 0510-85346300
手机:15961889150
联系人:潘小姐
微信:
邮箱:mdc@iscsemi.com
地址:江苏无锡无锡新区新梅路68号
∟ 功率三极管(87)∟ 开关三极管(2)∟ 低噪声三极管(74)∟ 复合(达林顿)三极管(6)∟ 其他三极管(3)
DESCRIPTION
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -120V(Min)·HighDC Current Gain-: hFE=1000(Min)@ (VCE= -3V, IC= -1.5A)APPLICATIONS·Designed for low frequency power amplifier applications.ELECTRICAL CHARACTERISTICSTj=25℃unless otherwise specifiedSYMBOLPARAMETERCONDITIONSMINTYP.MAXUNITV(BR)CEOCollector-Emitter Breakdown VoltageIC= -25mA; RBE=∞-120
VV(BR)CBOCollector-BaseBreakdownVoltageIC= -0.1mA; IE= 0-120
VV(BR)EBOEmitter-BaseBreakdownVoltageIE= -50mA; IC= 0-7
VVCE(sat)-1Collector-Emitter Saturation VoltageIC= -1.5A; IB= -3mA
-1.5VVCE(sat)-2Collector-Emitter Saturation VoltageIC= -3A; IB= -30mA
-3.0VVBE(sat)-1Base-Emitter Saturation VoltageIC= -1.5A; IB= -3mA
-2.0VVBE(sat)-2Base-Emitter Saturation VoltageIC= -3A; IB= -30mA
-3.5VICBOCollector Cutoff CurrentVCB= -100V; IE= 0
-10μAICEOCollector Cutoff CurrentVCE= -100V; RBE=∞
-10μAhFEDC Current GainIC= -1.5A; VCE= -3V1000 20000 VECFC-E Diode Forward VoltageIF= 3A
3.0V
企业名:无锡固电半导体股份有限公司
类型:生产制造商
电话: 0510-85346300
手机:15961889150
联系人:潘小姐
微信:
邮箱:mdc@iscsemi.com
地址:江苏无锡无锡新区新梅路68号