是
ISC
2SA1184
功率
硅(Si)
PNP型
平面型
直插型
塑料封装
企业名：无锡固电半导体股份有限公司
类型：生产制造商
电话： 0510-85346300
手机：15961889150
联系人：潘小姐
QQ： 
微信：
邮箱：mdc@iscsemi.com
地址：江苏无锡无锡新区新梅路68号
∟ 功率三极管(87)∟ 开关三极管(2)∟ 低噪声三极管(74)∟ 复合(达林顿)三极管(6)∟ 其他三极管(3)
DESCRIPTION
·High Collector-Emitter Breakdown Voltage-
V(BR)CEO= -120V (Min)
·Complement to Type 2SC2824
APPLICATIONS
·Designed for audio frequency power amplifier applications.
SYMBOL | PARAMETER | VALUE | UNIT |
VCBO | Collector-Base Voltage | -120 | V |
VCEO | Collector-Emitter Voltage | -120 | V |
VEBO | Emitter-Base Voltage | -5.0 | V |
IC | Collector Current-Continuous | -1 | A |
IB | Base Current-Continuous | -0.1 | A |
PC | Collector Power Dissipation @ Ta=25℃ | 1 | W |
Total Power Dissipation @ TC=25℃ | 15 | ||
TJ | JunctionTemperature | 150 | ℃ |
Tstg | StorageTemperature Range | -55~150 | ℃ |
ELECTRICAL CHARACTERISTICS
TC=25℃unless otherwise specified
SYMBOL | PARAMETER | CONDITIONS | MIN | TYP. | MAX | UNIT |
V(BR)CEO | Collector-Emitter Breakdown Voltage | IC= -10mA; IB= 0 | -120 |
|
| V |
V(BR)EBO | Emitter-Base Breakdown Voltage | IE= -1mA; IC= 0 | -5 |
|
| V |
VCE(sat) | Collector-Emitter Saturation Voltage | IC= -500mA; IB= -50mA |
|
| -1.0 | V |
VBE(on) | Base-Emitter On Voltage | IC= -500mA; VCE= -5V |
|
| -1.0 | V |
ICBO | Collector Cutoff Current | VCB= -120V; IE= 0 |
|
| -0.1 | μA |
IEBO | Emitter Cutoff Current | VEB= -5V; IC= 0 |
|
| -0.1 | μA |
hFE | DC Current Gain | IC= -100mA; VCE= -5V | 80 |
| 240 |
|
fT | Current-Gain—Bandwidth Product | IC= -100mA; VCE= -5V | 120 |
| MHz | |
COB | Output Capacitance | IE= 0; VCB= -10V; f= 1.0MHz |
| 30 |
| pF |
u hFEClassifications
O | Y |
80-160 | 120-240 |
企业名：无锡固电半导体股份有限公司
类型：生产制造商
电话： 0510-85346300
手机：15961889150
联系人：潘小姐
QQ：
微信：
邮箱：mdc@iscsemi.com
地址：江苏无锡无锡新区新梅路68号
