MRF1K50HR5

RF Power LDMOS Transistor High Ruggedness N--Channel Enhancement--Mode Lateral MOSFET

射频金属氧化物半导体场效应(RF MOSFET)晶体管 Airfast RF Power LDMOS Transistor, 1500 W CW, 1.8-500 MHz, 50 V

This high ruggedness device is designed for use in high VSWR industrial, scientific and medical applications, as well as radio and VHF TV broadcast, sub--GHz aerospace and mobile radio applications. Its unmatched input and output design allows for wide frequency range use from 1.8 to 500 MHz.

Features MRF1K50HR5

• High drain--source avalanche energy absorption capability

• Unmatched input and output allowing wide frequency range utilization

• Device can be used single--ended or in a push--pull configuration

• Characterized from 30 to 50 V for ease of use

• Suitable for linear application

• Integrated ESD protection with greater negative gate--source voltage range for improved Class C operation

• Recommended driver: MRFE6VS25N (25 W) MRF1K50HR5

• Lower thermal resistance part available: MRF1K50N

• Included in NXP product longevity program with assured supply for a minimum of 15 years after launch

型号: MRF1K50HR5 

制造商: NXP 

单位重量: 0.001 mg

企业名：深圳市中立信电子科技有限公司

类型：贸易/代理/分销

电话： 0755-23956688
0755-23956688

手机：13410226883

联系人：叶先生/王先生

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邮箱：Lee@zlxele.com

地址：广东深圳深圳市福田区彩田路彩虹新都大厦彩荟阁7A室