TheISSIIS62/65WV6416DALLandIS62/65WV6416DBLL

are high-speed,1MbitstaticRAMsorganizedas64Kwords

by 16 bits. It is fabricated using ISSI's high-performance

CMOS technology. This highly reliable process coupled

with innovative circuit design techniques, yields highperformance

and low power consumption devices.

When CS1 is HIGH (deselected) or when CS2 is LOW

(deselected) or when CS1 is LOW, CS2 is HIGH and both

LBand UBare HIGH, the device assumes a standby mode

at which the power dissipation can be reduced down with

CMOS input levels.

Easy memory expansion is provided by using Chip Enable

and Output Enable inputs. The active LOW Write Enable

(WE) controls both writing and reading of the memory. A

data byte allows Upper Byte (UB) and Lower Byte (LB)

access.

TheIS62/65WV6416DALLandIS62/65WV6416DBLLare

packaged in the JEDEC standard 48-pin mini BGA (6mm

x 8mm) and 44-Pin TSOP (TYPE II).

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