SGH30N60RUFD
Short Circuit Rated IGBT
General Description
Fairchild's RUFD series of Insulated Gate Bipolar
Transistors (IGBTs) provide low conduction and switching
losses as well as short circuit ruggedness. The RUFD
series is designed for applications such as motor control,
uninterrupted power supplies (UPS) and general inverters
where short circuit ruggedness is a required feature.
Features
• Short circuit rated 10us @ TC = 100°C, VGE = 15V
• High speed switching
• Low saturation voltage : VCE(sat) = 2.2 V @ IC = 30A
• High input impedance
• CO-PAK, IGBT with FRD : trr = 50ns (typ.)
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Notes :
(1) Repetitive rating : Pulse width limited by max. junction temperature
Thermal Characteristics
Symbol Description SGH30N60RUFD Units
VCES Collector-Emitter Voltage 600 V
VGES Gate-Emitter Voltage ± 20 V
IC
Collector Current @TC = 25°C 48 A
Collector Current @ TC = 100°C 30 A
ICM (1) Pulsed Collector Current 90 A
IF Diode Continuous Forward Current @ TC = 100°C 25 A
IFM Diode Maximum Forward Current 220 A
TSC Short Circuit Withstand Time @ TC =100°C 10 us
PD Maximum Power Dissipation @ TC = 25°C 235 W
Maximum Power Dissipation @ TC = 100°C 90 W
TJ Operating Junction Temperature -55 to +150 °C
Tstg Storage Temperature Range -55 to +150 °C
TL
Maximum Lead Temp. for Soldering
Purposes, 1/8” from Case for 5 Seconds 300 °C
Symbol Parameter Typ. Max. Units
RθJC(IGBT) Thermal Resistance, Junction-to-Case -- 0.53 °C/W
RθJC(DIODE) Thermal Resistance, Junction-to-Case -- 0.83 °C/W
RθJA Thermal Resistance, Junction-to-Ambient -- 40 °C/W
Applications
AC & DC motor controls, general purpose inverters, robotics, and servo controls.

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