是
ISC
2SD1210
功率
硅(Si)
NPN型
平面型
直插型
塑料封装
企业名:无锡固电半导体股份有限公司
类型:生产制造商
电话: 0510-85346300
手机:15961889150
联系人:潘小姐
微信:
邮箱:mdc@iscsemi.com
地址:江苏无锡无锡新区新梅路68号
∟ 功率三极管(87)∟ 开关三极管(2)∟ 低噪声三极管(74)∟ 复合(达林顿)三极管(6)∟ 其他三极管(3)
DESCRIPTION
·High DC Current Gain
: hFE= 1000(Min.)@ IC= 10A
·Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= 100V(Min)
APPLICATIONS
·Designed for audio frequency power amplifier and low
speed high current switching industrial use.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL | PARAMETER | VALUE | UNIT |
VCBO | Collector-Base Voltage | 150 | V |
VCEO | Collector-Emitter Voltage | 100 | V |
VEBO | Emitter-Base Voltage | 8 | V |
IC | Collector Current-Continuous | 10 | A |
ICM | Collector Current-Peak | 20 | A |
IB | Base Current- Continuous | 1 | A |
PC | Collector Power Dissipation @Ta=25℃ | 3 | W |
Collector Power Dissipation @TC=25℃ | 80 | ||
Tj | Junction Temperature | 150 | ℃ |
Tstg | StorageTemperature Range | -55~150 | ℃ |
ELECTRICAL CHARACTERISTICS
TC=25℃unless otherwise specified
SYMBOL | PARAMETER | CONDITIONS | MIN | TYP. | MAX | UNIT |
VCE(sat) | Collector-Emitter Saturation Voltage | IC= 10A, IB= 25mA |
|
| 1.5 | V |
VBE(sat) | Base-Emitter Saturation Voltage | IC= 10A, IB= 25mA |
|
| 2.0 | V |
ICBO | Collector Cutoff current | VCB= 100V, IE= 0 |
|
| 10 | μA |
IEBO | Emitter Cutoff Current | VEB= 8V; IC= 0 |
|
| 5 | mA |
hFE | DC Current Gain | IC= 10A; VCE= 2V | 1000 |
|
|
|
Switching Times | ||||||
ton | Turn-On Time | IC= 10A,IB1= -IB2= 25mA; RL= 5Ω;VCC≈50V |
| 1.0 |
| μs |
tstg | Storage Time |
| 5.0 |
| μs | |
tf | Fall Time |
| 2.0 |
| μs |
"
企业名:无锡固电半导体股份有限公司
类型:生产制造商
电话: 0510-85346300
手机:15961889150
联系人:潘小姐
微信:
邮箱:mdc@iscsemi.com
地址:江苏无锡无锡新区新梅路68号