FQPF10N60CF FAIRCHILD场效应管 仙童MOS管

  • 型号/规格:

    FQPF10N60CF

  • 品牌/商标:

    FAIRCHILD(飞兆)

  • 封装形式:

    TO-220

  • 环保类别:

    无铅环保型

  • 安装方式:

    直插式

  • 包装方式:

    盒带编带包装

  • 功率特征:

    大功率

FQP10N60CF/FQPF10N60CF600V N-ChannelMOSFET Features • 9A, 600V, RDS(on) = 0.8Ω @VGS = 10 V • Low gate charge ( typical 44 nC) • Low Crss ( typical 18 pF) •Fastswitching • 100% avalanche tested • Improved dv/dt capability Description These N-Channel enhancement modepowerfield effect transistors are produced usingFairchild’s proprietary, planar stripe, DMOStechnology. Thisadvancedtechnology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched modepowersupplies, active power factor correction, electronic lamp ballasts based on half bridge topology.

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