供应60V,12A N-Ch MOS场效应管 AOD444

  • 型号/规格:

    AOD444/D444/P6006BD

  • 品牌/商标:

    AOSMD

  • 封装形式:

    TO-252

  • 环保类别:

    无铅环保型

  • 安装方式:

    贴片式

  • 包装方式:

    盒带编带包装

AOD444/AOI44460V N-Channel MOSFET General Description Product SummaryVDSID (at VGS=10V) 12ARDS(ON) (at VGS=10V) < 60mΩRDS(ON) (at VGS = 4.5V) < 85mΩ100% UIS Tested100% Rg TestedSymbolVDSVGSIDMIAS, IAREAS, EARTJ, TSTGSymbolt ≤ 10sSteady-StateMaximum Junction-to-Case Steady-State RθJC °C/WMaximum Junction-to-Ambient A D °C/W4607.5Power Dissipation B PD WPower Dissipation A PDSM WTA=70°C201.3TA=25°CATA=25°CIDSM ATA=70°CID129TC=25°CTC=100°CAvalanche energy L=0.1mH C mJAvalanche Current C3Continuous DrainCurrent18419 AThe AOD444/AOI444 combine advanced trench MOSFETtechnology with a low resistance package to provideextremely low RDS(ON). Those devices are suitable for usein PWM, load switching and general purpose applications.

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