原装FM25V02A-GTR 铁电存储器(FRAM)

F-RAM NVRAM FRAM Memory Serial

256-Kbit(32K x 8bit)，SPI接口，工作电压：2.0V to 3.6V

 

原装FM25V02A-GTR 铁电存储器(FRAM)的技术参数：

制造商: Cypress Semiconductor

产品种类: F-RAM

安装风格: SMD/SMT

封装 / 箱体: SOIC-8

存储容量: 256 kbit

接口类型: SPI

存储器：RAM

存储器类型：FRAM（Ferroelectric RAM）

存储容量：256K（32K x 8）

速度：40MHz

接口：SPI 串行

电压 - 电源：2 V ~ 3.6 V

工作温度：-40°C ~ 85°C（TA）

封装/外壳：8-SOIC（0.154"，3.90mm 宽）

供应商器件封装：8-SOIC

组织: 32 k x 8

系列: FM24V02

封装: Reel

封装: Cut Tape

封装: MouseReel

商标: Cypress Semiconductor

湿度敏感性: Yes

工作电源电压: 3.3 V

产品类型: FRAM

包装量 ：  2500

 

原装FM25V02A-GTR 铁电存储器(FRAM) 的描述 ：

The FM25V02A is a 256-Kbit nonvolatile memory employing an

advanced ferroelectric process. An F-RAM is nonvolatile and

performs reads and writes similar to a RAM. It provides reliable

data retention for 151 years while eliminating the complexities,

overhead, and system-level reliability problems caused by serial

flash, EEPROM, and other nonvolatile memories.

Unlike serial flash and EEPROM, the FM25V02A performs write

operations at bus speed. No write delays are incurred. Data is

written to the memory array immediately after each byte is

successfully transferred to the device. The next bus cycle can

commence without the need for data polling. In addition, the

product offers substantial write endurance compared with other

nonvolatile memories. The FM25V02A is capable of supporting

1014 read/write cycles, or 100 million times more write cycles

than EEPROM. 

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