NT5CB128M16IP-EK  DDR3 SDRAM

Commercial, Industrial and Automotive DDR3 2Gb SDRAM

NT5CB128M16IP-EK  DDR3 SDRAM的技术参数：

封装	FBGA-
存储容量	2Gbit
无铅/环保	无铅/环保
电压(伏)	1.5 V
温度规格	0°C~+95°C
速度	933 MHZ
组织	128Mx16
针脚数	96
Density	2Gb
Nanya Designator	NT
Grade	Commercial Grade
Interface And Power	SSTL_15 (1.5V, 1.5V)

 

NT5CB128M16IP-EK  DDR3 SDRAM的技术参数：

The 2Gb Double-Data-Rate-3 DDR3 is double data rate architecture to achieve high-speed operation. It is internally configured as an eight bank DRAMs.

The 2Gb chip is organized as 32Mbit x 8 I/Os x 8 banks or 16Mbit x 16 I/Os x 8 bank devices. These synchronous devices achieve high speed double-data-rate transfer rates of up to 1866 Mb/sec/pin for general applications.

 The chip is designed to comply with all key DDR3 DRAM key features and all of the control and address inputs are synchronized with a pair of externally supplied differential clocks. Inputs are latched at the cross point of differential clocks (CK rising and CK falling).

 All I/Os are synchronized with a single ended DQS or differential DQS pair in a source synchronous fashion. These devices operate with a single 1.5V ± 0.075V or 1.35V -0.067V/+0.1V power supply and are available in BGA packages

 

 

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