原装H5TC4G83BFR-PBA LPDDR3

SK HYNIX/海力士 DDR3L SDRAM  512MX8 DDR3L

原装H5TC4G83BFR-PBA LPDDR3的技术参数：

脚位/封装  ： FBGA-78

外包装  ： TRAY

无铅/环保  ： 无铅/环保

电压(伏)  ： 1.35v

温度规格  ： 0°C~+85°C

速度  ： 800 MHZ

Number Of Words  ： 512M

Bit Organization  ： x8

Density  ： 4G

Operating Temperature  ： commercial temperature(0°C~85°C) & 1.35 VDD power

Package Material  ： lead & halogen free(ROHS compliant)

Die Generation  ： 3rd

No Of Banks  ： 8 banks

Product Family  ： DRAM

Shipping Method  ： tray

原装H5TC4G83BFR-PBA LPDDR3 的描述：

The H5TC4G43BFR-xxA and H5TC4G83BFR-xxA are a 4Gb low power Double Data Rate III (DDR3L) Synchronous DRAM, ideally suited for the main memory applications which requires large memory density, high bandwidth and low power operation at 1.35V.

DDR3L SDRAM provides backward compatibility with the 1.5V DDR3 based environment without any changes. (Please refer to the SPD information for details.)

SK hynix 4Gb DDR3L SDRAMs offer fully synchronous operations referenced to both rising and falling edges of the clock.

While all addresses and control inputs are latched on the rising edges of the CK (falling edges of the CK), Data, Data strobes and Write data masks inputs are sampled on both rising and falling edges of it.

The data paths are internally pipelined and 8-bit prefetched to achieve very high bandwidth.

4Gb low power Double Data Rate III (DDR3L) Synchonous DRAM.

1.35V VDD=VDDQ=1.35V + 0.100 / - 0.067V • Fully differential clock inputs (CK, CK) operation • Differential Data Strobe (DQS, DQS) • On chip...

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