K4B4G1646D-BCK0  原装 DDR3

4Gb D-die DDR3 SDRAM Only x16 96FBGA with Lead-Free & Halogen-Free (RoHS compliant)

 

 

K4B4G1646D-BCK0  原装 DDR3   的技术参数：

脚位/封装	FBGA-96
外包装	TRAY
无铅/环保	无铅/环保
电压(伏)	1.5 V
温度规格	0°C ~+  85°C
速度	1600 Mbps
Number Of Words	256M
Bit Organization	X16
Density	4G
Rohs	是

 

 

K4B4G1646D-BCK0  原装 DDR3  的描述

The DDR3 SDRAM is a high-speed CMOS, dynamic random-access memory internally configured as a eight-bank DRAM. The DDR3 SDRAM uses a 8n prefetch architecture to achieve high-speed operation. The 8n prefetch architecture, with an interface designed to transfer two data words per clock cycle at the I/O pins. A single read or write access for the DDR3 SDRAM consists of a single 8n-bit wide, four clock data transfer at the internal DRAM core and two corresponding n-bit wide, one-half clock cycle data transfers at the I/O pins.

 

 

 Read and write operation to the DDR3 SDRAM are burst oriented, start at a selected location, and continue for a burst length of four or eight in a programmed sequence. Operation begins with the registration of an Active command, which is then followed by a Read or Write command. The address bits registered coincident with the Active command are used to select the bank and row to be accessed (BA0-BA2 select the bank; A0-A15 select the row).

 

The address bits registered coincident with the Read or Write command are used to select the starting column location for the burst operation, determine if the auto precharge command is to be issued (via A10/AP), and the select BC4 or BL8 mode ’on the fly’ (via A12) if enabled in the mode register. Prior to normal operation, the DDR3 SDRAM must be powered up and initialized in a predefined manner. The following sections provide detailed information covering device reset and initialization, register definition, command descriptions and device operation.

 

 

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TC58NVG1S3HTA00 10000 BGA 22+ KOXIA/铠侠

TC58NVG0S3HTA00 10000 BGA 22+ KOXIA/铠侠

TC58NVG0S3ETAI0 10000 BGA 22+ KOXIA/铠侠

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NT5CC128M16JR-EK 10000 BGA 22+ NANYA/南亚

NT5AD512M16C4-HR 10000 BGA 22+ NANYA/南亚

NT5AD512M16A4-HR 10000 BGA 22+ NANYA/南亚

NT5AD256M16D4-HR 10000 BGA 22+ NANYA/南亚

KMGX6001BA-B514 10000 BGA 22+ SAMSUNG/三星

KMGP6001BA-B514 10000 BGA 22+ SAMSUNG/三星

K4A8G165WC-BCTD 10000 BGA 22+ SAMSUNG/三星

K4A8G165WC-BCRC 10000 BGA 22+ SAMSUNG/三星

K4A8G165WB-BCRC 10000 BGA 22+ SAMSUNG/三星

K4A4G165WF-BCTD 10000 BGA 22+ SAMSUNG/三星

K4A4G165WE-BCRC 10000 BGA 22+ SAMSUNG/三星

H9HCNNNCPUMLHR-NME 10000 BGA 22+ SK HYNIX/海力士

H5AN8G6NCJR-VKC 10000 BGA 22+ SK HYNIX/海力士

H5AN4G6NBJR-VKC 10000 BGA 22+ SK HYNIX/海力士

H5AN4G6NBJR-UHC 10000 BGA 22+ SK HYNIX/海力士

H26M41208HPR 10000 BGA 22+ SK HYNIX/海力士

H26M41204HPR 10000 BGA 22+ SK HYNIX/海力士

 

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