M15F1G1664A-EFBG2CS 原装 DDR3

8M x 16 Bit x 8 BanksDDR3 SDRAM

 

M15F1G1664A-EFBG2CS 原装 DDR3 的技术参数：

制造商	ESMT晶豪
DRAM 类型	DRAM DDR3
针脚数	96 ball
封装	BGA
架构	64×16
RoHS	是
存储器类型	易失性
速率	1066MHz
工作电压	1.5V

 

 

M15F1G1664A-EFBG2CS 原装 DDR3 的描述：

The  1Gb  Double-Data-Rate-3  (DDR3)  DRAM  is  double data  rate  architecture  to  achieve  high-speed  operation.  It is internally configured as an eight bank DRAM.  

 

 The 1Gb chip is organized as 8Mbit x 16 I/Os x 8 bank devices. These synchronous devices achieve high speed double-data-rate transfer rates of up to 2133 Mb/sec/pin for general applications.

 

The chip is designed to comply with all key DDR3 DRAM key features and all of the control and address inputs are synchronized with  a  pair  of  externally  supplied  differential  clocks.  Inputs  are  latched  at  the  cross  point  of  differential  clocks  (CK  rising  and CK falling).

 

All I/Os are synchronized with a differential DQS pair in a source synchronous fashion.   These devices operate with a single 1.5V ± 0.075V power supply and are available in BGA package.

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