MT46V64M8CY-5B:J TR 全新原装  DDR

 

 

? VDD = 2.5V ±0.2V, VDDQ = 2.5V ±0.2V

VDD = 2.6V ±0.1V, VDDQ = 2.6V ±0.1V (DDR400)1

? Bidirectional data strobe (DQS) transmitted /received with data, i.e., source-synchronous data capture (x16 has two – one per byte)

? Internal, pipelined double-data-rate (DDR) architecture; two data accesses per clock cycle

? Differential clock inputs (CK and CK#)

? Commands entered on each positive CK edge

? DQS edge-aligned with data for READs; centeraligned with data for WRITEs

? DLL to align DQ and DQS transitions with CK

? Four internal banks for concurrent operation

? Data mask (DM) for masking write data (x16 has two – one per byte)

? Programmable burst lengths: 2, 4, or 8

? Auto refresh– 64ms, 8192-cycle

? Longer-lead TSOP for improved reliability (OCPL)

? 2.5V I/O (SSTL_2 compatible)

? Concurrent auto precharge option is supported

? tRAS lockout supported (tRAP = tRCD)

 

优势出，有需要的欢迎联系

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