全新原装 IS43QR85120B-083RBLI

 

制造商	ISSI
产品种类	动态随机存取存储器
RoHS	是
安装风格	SMD/SMT
封装 / 箱体	FBGA-78
数据总线宽度	8 bit
存储容量	4 Gbit
（max）时钟频率	1.2 GHz
电源电压	1.14 V  to  1.26 V
工作温度	- 40 C to + 95 C

 

Standard Voltage : VDD = VDDQ = 1.2V, VPP=2.5V

High speed data transfer rates with system frequency up to 2666 Mbps

 

Data Integrity

- Auto Self Refresh (ASR) by DRAM built-in TS

- Auto Refresh and Self Refresh Modes

 

DRAM access bandwidth

- Separated IO gating structures by Bank Groups

- Self Refresh Abort

- Fine Granularity Refresh

 

Signal Synchronization

- Write Leveling via MR settings

- Read Leveling via MPR

 

Reliability & Error Handling

- Command/Address Parity

- Data bus Write CRC

- MPR readout

- Boundary Scan (x16 only)

 

Speed Grade (CL-TRCD-TRP)

- 2400Mbps

- 2666Mbps/ 18-18-18 (-075U)/ 16-16-16 (-083R)

Signal Integrity

- Internal VREFDQ Training

- Read Preamble Training

- Gear Down Mode

- Per DRAM Adressability

- Configurable DS for system compatibility

- Configurable On-Die Termination

- Data bus Inversion (DBI)

- ZQ Calibration for DS/ODT impedance accuracy via external ZQ pad (240 ohm +/- 1%)

 

 Power Saving and efficiency

- POD with VDDQ termination

- Command/Address Latency (CAL)

- Maximum Power Saving

- Low power Auto Self Refresh (LPASR)

 

Operating Temperature

- Commercial (Tc = 0 oC to +95 oC)

- Industrial (Tc = -40 oC to +95oC)

- Automotive A1 (Tc = - 40 oC to +95 oC)

- Automotive A2 (Tc = - 40 oC to +105 oC)

- Automotive A3 (Tc = - 40 oC to +125 oC)

 

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全新原包原装可含税（香港可交）

 

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