无锡固电ISC 供应2N5973三极管

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DESCRIPTION

·Collector-Emitter Sustaining Voltage-

: V_CEO(SUS)= 80V(Min)

·Low Saturation Voltage-

: V_CE(sat)= 1.0V(Max)@ I_C= 5A

·Excellent Safe Operating Area

APPLICATIONS

·Designed for use in high power audio amplifier applications

and high voltage switching regulator circuits.

ABSOLUTE MAXIMUM RATINGS(T_a=25℃)

SYMBOL	PARAMETER	VALUE	UNIT
V_CBO	Collector-Base Voltage	120	V
V_CEO	Collector-Emitter Voltage	80	V
V_EBO	Emitter-Base Voltage	6	V
I_C	Collector Current-Continuous	15	A
P_C	Collector Power Dissipation @T_C=25℃	150	W
T_J	Junction Temperature	200	℃
T_stg	Storage Temperature	-65~200	℃

THERMAL CHARACTERISTICS

SYMBOL	PARAMETER	MAX	UNIT
R_{th j-c}	Thermal Resistance,Junction to Case	1.17	℃/W

ELECTRICAL CHARACTERISTICS

T_C=25℃unless otherwise specified

SYMBOL	PARAMETER	CONDITIONS	MIN	MAX	UNIT
V_CEO(SUS)	Collector-Emitter Sustaining Voltage	I_C= 100mA ; I_B= 0	80		V
V_CE_(sat)_-1	Collector-Emitter Saturation Voltage	I_C= 5A; I_B= 0.5A		1.0	V
V_CE_(sat)_-2	Collector-Emitter Saturation Voltage	I_C= 15A; I_B= 3A		4.0	V
V_BE_(sat)	Base-Emitter Saturation Voltage	I_C= 5A; I_B= 0.5A		1.8	V
I_CEO	Collector Cutoff Current	V_CE= 80V; I_B= 0		1.0	mA
I_CBO	Collector Cutoff Current	V_CB= 120V; I_E= 0		1.0	mA
I_EBO	Emitter Cutoff Current	V_EB= 6V; I_C= 0		1.0	mA
h_FE-1	DC Current Gain	I_C= 5A; V_CE= 4V	25	75
h_FE-2	DC Current Gain	I_C= 15A; V_CE= 4V	5
f_T	Current Gain-Bandwidth Product	I_C= 0.2A; V_CE= 10V	4		MHz