是
isc
2N5973
功率
硅(Si)
NPN型
平面型
直插型
金属封装
企业名:无锡固电半导体股份有限公司
类型:生产制造商
电话: 0510-85346300
手机:15961889150
联系人:潘小姐
微信:
邮箱:mdc@iscsemi.com
地址:江苏无锡无锡新区新梅路68号
∟ 功率三极管(87)∟ 开关三极管(2)∟ 低噪声三极管(74)∟ 复合(达林顿)三极管(6)∟ 其他三极管(3)
DESCRIPTION
·Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= 80V(Min)
·Low Saturation Voltage-
: VCE(sat)= 1.0V(Max)@ IC= 5A
·Excellent Safe Operating Area
APPLICATIONS
·Designed for use in high power audio amplifier applications
and high voltage switching regulator circuits.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL | PARAMETER | VALUE | UNIT |
VCBO | Collector-Base Voltage | 120 | V |
VCEO | Collector-Emitter Voltage | 80 | V |
VEBO | Emitter-Base Voltage | 6 | V |
IC | Collector Current-Continuous | 15 | A |
PC | Collector Power Dissipation @TC=25℃ | 150 | W |
TJ | Junction Temperature | 200 | ℃ |
Tstg | Storage Temperature | -65~200 | ℃ |
THERMAL CHARACTERISTICS
SYMBOL | PARAMETER | MAX | UNIT |
Rth j-c | Thermal Resistance,Junction to Case | 1.17 | ℃/W |
ELECTRICAL CHARACTERISTICS
TC=25℃unless otherwise specified
SYMBOL | PARAMETER | CONDITIONS | MIN | MAX | UNIT |
VCEO(SUS) | Collector-Emitter Sustaining Voltage | IC= 100mA ; IB= 0 | 80 | V | |
VCE(sat)-1 | Collector-Emitter Saturation Voltage | IC= 5A; IB= 0.5A |
| 1.0 | V |
VCE(sat)-2 | Collector-Emitter Saturation Voltage | IC= 15A; IB= 3A |
| 4.0 | V |
VBE(sat) | Base-Emitter Saturation Voltage | IC= 5A; IB= 0.5A |
| 1.8 | V |
ICEO | Collector Cutoff Current | VCE= 80V; IB= 0 |
| 1.0 | mA |
ICBO | Collector Cutoff Current | VCB= 120V; IE= 0 |
| 1.0 | mA |
IEBO | Emitter Cutoff Current | VEB= 6V; IC= 0 |
| 1.0 | mA |
hFE-1 | DC Current Gain | IC= 5A; VCE= 4V | 25 | 75 |
|
hFE-2 | DC Current Gain | IC= 15A; VCE= 4V | 5 |
|
|
fT | Current Gain-Bandwidth Product | IC= 0.2A; VCE= 10V | 4 |
| MHz |
企业名:无锡固电半导体股份有限公司
类型:生产制造商
电话: 0510-85346300
手机:15961889150
联系人:潘小姐
微信:
邮箱:mdc@iscsemi.com
地址:江苏无锡无锡新区新梅路68号