DESCRIPTION                                             

·DC Current Gain-

: h_FE= 30-90@I_C= -2.5A

·Wide Area of Safe Operation

·Collector-Emitter Sustaining Voltage-

: V_CEO(SUS)= -80V(Min)

·Complement to Type 2N5616

 

 

APPLICATIONS

·Designed for use in high frequency power amplifiers, audio

power amplifier and drivers.

 

 

ABSOLUTE MAXIMUM RATINGS(T_a=25℃)

SYMBOL	PARAMETER	VALUE	UNIT
VCBO	Collector-Base Voltage	-100	V
VCEO	Collector-Emitter Voltage	-80	V
VEBO	Emitter-Base Voltage	-5.5	V
IC	Collector Current-Continuous	-5	A
PC	Collector Power Dissipation@TC=25℃	50	W
TJ	Junction Temperature	150	℃
Tstg	Storage Temperature	-65~150	℃

 

THERMAL CHARACTERISTICS

SYMBOL	PARAMETER	MAX	UNIT
Rth j-c	Thermal Resistance,Junction to Case	3.0	℃/W

 

ELECTRICAL CHARACTERISTICS

 

T_C=25℃unless otherwise specified

 

SYMBOL	PARAMETER	CONDITIONS	MIN	MAX	UNIT
VCEO(SUS)	Collector-Emitter Sustaining Voltage	IC= -50mA ; IB= 0	-80		V
VCE(sat)	Collector-Emitter Saturation Voltage	IC= -5A; IB= -0.5A		-1.5	V
VBE(sat)	Base-Emitter Saturation Voltage	IC= -5A; IB= -0.5A		-2.2	V
ICEO	Collector Cutoff Current	VCE= -80V; IB= 0		-1.0	mA
ICBO	Collector Cutoff Current	VCB= -100V; IE= 0		-0.1	mA
IEBO	Emitter Cutoff Current	VEB= -5V; IC= 0		-0.1	mA
hFE	DC Current Gain	IC= -2.5A ; VCE= -5V	30	90
fT	Current-Gain—Bandwidth Product	IC= -0.5A ; VCE= -10V	50		MHz

 

 

 

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