VNL5050N3TR-E
ST(意法半导体)
: 30 uA
: 5 V
: - 40 C
: + 125 C
企业名:深圳市中立信电子科技有限公司
类型:贸易/代理/分销
电话:
0755-23956688
0755-23956688
手机:13410226883
联系人:叶先生/王先生
邮箱:Lee@zlxele.com
地址:广东深圳深圳市福田区彩田路彩虹新都大厦彩荟阁7A室
VNL5050N3TR-E
门驱动器 19A OMNIFET
OMNIFET III fully protected low-side driver
Features VNL5050N3TR-E
• Automotive qualified
• Drain current: 19 A
• ESD protection
• Overvoltage clamp
• Thermal shutdown
• Current and power limitation
• Very low standby current
• Very low electromagnetic susceptibility
• Compliant with European directive 2002/95/EC
• Open drain status output (VNL5050S5-E only)
Description VNL5050N3TR-E
The VNL5050N3TR-E VNL5050N3-E and VNL5050S5-E are monolithic devices made using STMicroelectronics VIPower® Technology, intended for driving resistive or inductive loads with one side connected to the battery.
Built-in thermal shutdown protects the chip from overtemperature and short-circuit. Output current limitation protects the devices in an overload condition. In case of long duration overload, the devices limit the dissipated power to a safe level up to thermal shutdown intervention.Thermal shutdown, with automatic restart, allows the devices to recover normal operation as soon as a fault condition disappears. Fast demagnetization of inductive loads is achieved at turn-off.
企业名:深圳市中立信电子科技有限公司
类型:贸易/代理/分销
电话:
0755-23956688
0755-23956688
手机:13410226883
联系人:叶先生/王先生
邮箱:Lee@zlxele.com
地址:广东深圳深圳市福田区彩田路彩虹新都大厦彩荟阁7A室