AT49BV642D-70TU 特性

• Single Voltage Operation Read/Write: 2.65V - 3.6V
• 2.7V - 3.6V Read/Write
• Access Time – 70 ns
• Sector Erase Architecture
  – One Hundred Twenty-seven 32K Word Main Sectors with Individual Write Lockout
  – Eight 4K Word Sectors with Individual Write Lockout
• Fast Word Program Time – 10 μs
• Typical Sector Erase Time: 32K Word Sectors – 500 ms; 4K Word Sectors – 100 ms
• Suspend/Resume Feature for Erase and Program
  – Supports Reading and Programming Data from Any Sector by Suspending Erase
  of a Different Sector
  – Supports Reading Any Word by Suspending Programming of Any Other Word
• Low-power Operation
  – 10 mA Active
  – 15 μA Standby
• Data Polling and Toggle Bit for End of Program Detection
• VPP Pin for Write Protection and Accelerated Program Operations
• RESET Input for Device Initialization
• Sector Lockdown Support
• TSOP Package
• Top or Bottom Boot Block Configuration Available
• 128-bit Protection Register
• Common Flash Interface (CFI)
• Green (Pb/Halide-free) Packaging

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