VNA-25+  High Directivity  Monolithic Amplifier

Product Features 

• 3V & 5V operation 

• no external biasing circuit required 

• internal DC blocking at RF input and output 

• high directivity, 20 dB typ. 

• wide bandwidth, 0.5 to 2.5 GHz 

• low noise figure, 5.5 dB typ. 

• output power, up to +18.2 dBm typ. 

• low cost Typical 

Applications 

• buffer amplifier 

• cellular 

• PCN Pin 

 General Description 

VNA-25+ is a wideband amplifier offering high dynamic range. It has repeatable performance from lot to lot. It is enclosed in an 8-lead SOIC package. VNA-25+ is fabricated using GaAs MESFET technology. Expected MTBF at 85°C case temperature is 40,000 years at 2.8V, 2,000 at 5V. 

企业名：深圳市银河之芯电子经营部

类型：其他供应商

电话： 0755-23816037

手机：15915462955

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地址：广东深圳深圳市福田区华强北华强电子世界1号楼3楼13C096