MJ21196G
ON(安森美)
TO-3
无铅环保型
直插式
散装
大功率
高频
企业名:深圳市勤思达科技有限公司
类型:贸易/代理/分销
电话:
0755-83264115
0755-82710921
手机:15889758566
13714022780
联系人:朱亮成/18948336722
微信:
邮箱:1282971461@qq.com
地址:广东深圳深圳市福田区华强北赛格科技园四栋中12楼A4座—2L
制造商:ON Semiconductor
产品种类:Transistors Bipolar (BJT)
晶体管极性:PNP
集电极—发射极电压 VCEO:250 V
发射极 - 基极电压 VEBO:5 V
直流电集电极电流:16 A
直流集电极/Base Gain hfe Min:25
配置:Single
工作频率:4 MHz
工作温度:+ 150 C
安装风格:Through Hole
封装 / 箱体:TO-204-2 (TO-3)
封装:Tray
集电极连续电流:16 A
工作温度:- 65 C
功率耗散:250 W
工厂包装数量:100
备注:该MJ21195G和MJ21196G利用多孔发射极技术并专为高功率音频输出,磁头设计定位器和线性应用。
特点
•总谐波失真特点
•高直流电流增益 - ^ hFE= 25分钟@我C= 8 ADC
•出色的增益线性度
•高SOA : 3 A, 80 V, 1秒
•无铅包可用
The MJ21195G and MJ21196G utilize Perforated Emitter
technology and are specifically designed for high power audio output,
disk head positioners and linear applications.
Features
• Total Harmonic Distortion Characterized
• High DC Current Gain
• Excellent Gain Linearity
• High SOA
• These Devices are Pb−Free and are RoHS Compliant*
MJ21195G − PNP MJ21196G − NPN
There are two limitations on the power handling
ability of a transistor; average junction temperature
and secondary breakdown. Safe operating area curves
indicate IC − VCE limits of the transistor that must be
observed for reliable operation; i.e., the transistor
must not be subjected to greater dissipation than the
curves indicate.
The data of Figure 13 is based on TJ(pk) = 200°C;
TC is variable depending on conditions. At high case
temperatures, thermal limitations will reduce the
power than can be handled to values less than the
limitations imposed by second breakdown.
MJ21195G − PNP MJ21196G − NPN
企业名:深圳市勤思达科技有限公司
类型:贸易/代理/分销
电话:
0755-83264115
0755-82710921
手机:15889758566
13714022780
联系人:朱亮成/18948336722
微信:
邮箱:1282971461@qq.com
地址:广东深圳深圳市福田区华强北赛格科技园四栋中12楼A4座—2L