1M x 16  HIGH-SPEED ASYNCHRO*US
CMOS STATIC RAM WITH 3.3V SUPPLY APRIL 2006
FEATUR*
• High-speed access times:
  8, 10, 20 ns
• High-performance, low-power CMOS process
• Multiple center power and ground pins for greater
noise immunity
• Easy memory expansion with CE and OE op-
tions
• CE power-down
• Fully static operation: no clock or refresh
required
• TTL compatible inputs and outputs
• Single power supply
VDD 1.65V to 2.2V (IS61WV102416ALL)
speed = 20ns for VDD 1.65V to 2.2V
VDD 2.4V to 3.6V (IS61/64WV102416BLL)
speed = 10ns for VDD 2.4V to 3.6V
speed = 8ns for VDD 3.3V 5%
• Packages available:
–  48-ball miniBGA  (9mm x 11mm)
–   48-pin TSOP (T*e I)
• Industrial and Automotive Temperature Support
• Lead-free available
• Data control for upper and lower bytes
D*CRIPTION
The  ISSI IS61WV102416ALL/BLL and IS64WV102416BLL
are high-speed, 16M-bit static RAMs organized as 1024K
words by 16 bits. It is fabricated using  ISSI's high-perform-
ance CMOS technology. This highly reliable process coupled
with innovative circuit design techniques, yields high-perfor-
mance and low power consumption devices.
When CE is HIGH (deselected), the device *umes a
standby mode at which the power dissipation can be
reduced down with CMOS input levels.
Easy memory expansion is provided by using Chip Enable
and Output Enable inputs, CE and OE. The active LOW
Write Enable (WE) controls both writing and reading of the
memory. A data byte allows Upper Byte (UB) and Lower
Byte (LB) access.
The device is packaged in the JEDEC standard 48-pin
TSOP T*e I and 48-pin Mini BGA (9mm x 11mm).

企业名：深圳市辉盛伟业电子科技有限公司

类型：经销商

电话：

手机：13631682277

联系人：柯伟斌

地址：广东深圳中国 广东 深圳市福田区 中航路高科德电子市场5楼53845