DDR SDRAM

是Double Data Rate Synchronous Dynamic Random Access Memory（双数据率同步动态随机存储器）的简称，是由VIA等公司为了与RDRAM相抗衡而提出的内存标准。DDR SDRAM是SDRAM的更新换代产品，采用2.5v工作电压，它允许在时钟脉冲的上升沿和下降沿传输数据，这样不需要提高时钟的频率就能加倍提高SDRAM的速度，并具有比SDRAM多一倍的传输速率和内存带宽，例如DDR 266与PC 133 SDRAM相比，工作频率同样是133MHz，但内存带宽达到了2.12 GB/s，比PC 133 SDRAM高一倍。目前主流的芯片组都支持DDR SDRAM，是目前最常用的内存类型。

DESCRIPTION描述
The Hynix HY5DU561622ETP is a 268,435,456-bit CMOS Double Data Rate(DDR) Synchronous DRAM, ideally suited
for the point-to-point applications which requires high bandwidth.
The Hynix 16Mx16 DDR SDRAMs offer fully synchronous operations referenced to both rising and falling edges of the
clock. While all addresses and control inputs are latched on the rising edges of the CK (falling edges of the /CK), Data,
Data strobes and Write data masks inputs are sampled on both rising and falling edges of it. The data paths are inter-
nally pipelined and 2-bit prefetched to achieve very high bandwidth. All input and output voltage levels are compatible
with SSTL_2.

FEATURES特性
• 2.5V +/-5% VDD and VDDQ power supply          
supports 250/200 Mhz
• 2.6V +/- 0.1V VDD/VDDQ power supply supports
300/ 275Mhz
• 2.8V +/- 0.1V VDD/ VDDQ power supply supports
350Mhz
• All inputs and outputs are compatible with SSTL_2 
interface
• JEDEC standard 400mil 66pin TSOP-II with 0.65mm 
pin pitch
• Fully differential clock inputs (CK, /CK) operation
• Double data rate interface
• Source synchronous - data transaction aligned to 
bidirectional data strobe (DQS)
• x16 device has 2 bytewide data strobes (LDQS,
UDQS) per each x8 I/O
• Data outputs on DQS edges when read (edged DQ)
Data inputs on DQS centers when write (centered
DQ)
• Data(DQ) and Write masks(DM) latched on the both
rising and falling edges of the data strobe
• All addresses and control inputs except Data, Data
strobes and Data masks latched on the rising edges
of the clock
• Write mask byte controls by LDM and UDM
• Programmable /CAS latency 3 / 4 / 5  supported
• Programmable Burst Length 2 / 4 / 8 with both
sequential and interleave mode
• Internal 4 bank operations with single pulsed /RAS
• tRAS Lock-Out function supported
• Auto refresh and self refresh supported
• 8192 refresh cycles / 64ms

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