ISC/ISCSEMI
BT134-600E
单向
三极
塑料封装
TO-126
普通
不带散热片
中频
小功率
4（A）
10（mA）
企业名：无锡固电半导体股份有限公司
类型：生产制造商
电话： 0510-85346300
手机：15961889150
联系人：潘小姐
QQ： 
微信：
邮箱：mdc@iscsemi.com
地址：江苏无锡无锡新区新梅路68号
∟ 功率三极管(87)∟ 开关三极管(2)∟ 低噪声三极管(74)∟ 复合(达林顿)三极管(6)∟ 其他三极管(3)
·With TO-126P package
·Designed for use in general purpose bidirectional switching and phase
control applications , which are intended to be interfaced directly to
microcontrollers , logic integrated circuits and other low power gate
trigger circuits.
SYMBOL | PARAMETER | MIN | UNIT |
VDRM | Repetitive peak off-state voltage | 600 | V |
VRRM | Repetitive peak off-state voltage | 600 | V |
IT(RMS) | RMS on-state current (full sine wave) | 4 | A |
ITSM | Non-repetitive peak on-state current | 25 | A |
PGM | Peak gate power dissipation | 5 | W |
PG(AV) | Average gate power dissipation | 0.5 | W |
Tj | Operating junction temperature | 110 | ℃ |
Tstg | Storage temperature | -45~150 | ℃ |
SYMBOL | PARAMETER | CONDITIONS | MIN | MAX | UNIT | |
IRRM | Repetitive peak reverse current | VR=VRRM, VR=VRRM, Tj=110℃ |
| 0.01 0.2 | mA | |
IDRM | Repetitive peak off-state current | VD=VDRM, VD=VDRM, Tj=110℃ |
| 0.01 0.2 | mA | |
IGT | Gate trigger current | Ⅰ | VD=12V; IT= 0.1A, RL= 30Ω |
| 10 | mA |
Ⅱ | 10 | |||||
Ⅲ | 10 | |||||
Ⅳ | 25 | |||||
VTM | On-state voltage | IT= 5A |
| 1.7 | V | |
IH | Holding current | IGT= 0.1A, VD= 12V |
| 10 | mA | |
VGT | Gate trigger voltage | VD=12V; RL= 30Ω |
| 1.5 | V | |
企业名：无锡固电半导体股份有限公司
类型：生产制造商
电话： 0510-85346300
手机：15961889150
联系人：潘小姐
QQ：
微信：
邮箱：mdc@iscsemi.com
地址：江苏无锡无锡新区新梅路68号
