ISC/ISCSEMI
BTA08-600C
单向
三极
塑料封装
TO-220
普通
带散热片
中频
中功率
8（A）
25（mA）
企业名：无锡固电半导体股份有限公司
类型：生产制造商
电话： 0510-85346300
手机：15961889150
联系人：潘小姐
QQ： 
微信：
邮箱：mdc@iscsemi.com
地址：江苏无锡无锡新区新梅路68号
∟ 功率三极管(87)∟ 开关三极管(2)∟ 低噪声三极管(74)∟ 复合(达林顿)三极管(6)∟ 其他三极管(3)
·With TO-220AB insulated package
·Suitables for general purpose applications where gate high sensitivity is
required. Application on 4Q such as phase control and static switching.
SYMBOL | PARAMETER | MIN | UNIT |
VDRM | Repetitive peak off-state voltage | 600 | V |
VRRM | Repetitive peak reverse voltage | 600 | V |
IT(RMS) | RMS on-state current (full sine wave)Tj=105℃ | 8 | A |
ITSM | Non-repetitive peak on-state current tp=20ms | 80 | A |
Tj | Operating junction temperature | 110 | ℃ |
Tstg | Storage temperature | -45~150 | ℃ |
Rth(j-c) | Thermal resistance, junction to case | 2.5 | ℃/W |
Rth(j-a) | Thermal resistance, junction to ambient | 60 | ℃/W |
SYMBOL | PARAMETER | CONDITIONS | MAX | UNIT | |
IRRM | Repetitive peak reverse current | VR=VRRM, VR=VRRM, Tj=110℃ | 0.01 0.5 | mA | |
IDRM | Repetitive peak off-state current | VD=VDRM, VD=VDRM, Tj=110℃ | 0.01 0.5 | mA | |
IGT | Gate trigger current | Ⅰ | VD=12V; RL= 30Ω | 25 | mA |
Ⅱ | 25 | ||||
Ⅲ | 25 | ||||
Ⅳ | 50 | ||||
IH | Holding current | IGT= 0.1A, Gate Open | 25 | mA | |
VGT | Gate trigger voltage all quadrant | VD=12V; RL= 30Ω | 1.3 | V | |
VTM | On-state voltage | IT= 11A; tp= 380μs | 1.55 | V | |
企业名：无锡固电半导体股份有限公司
类型：生产制造商
电话： 0510-85346300
手机：15961889150
联系人：潘小姐
QQ：
微信：
邮箱：mdc@iscsemi.com
地址：江苏无锡无锡新区新梅路68号
