是
ISC
2SA626
放大
硅(Si)
PNP型
平面型
直插型
金属封装
企业名:无锡固电半导体股份有限公司
类型:生产制造商
电话: 0510-85346300
手机:15961889150
联系人:刘玲玲
微信:
邮箱:mdc@iscsemi.com
地址:江苏无锡无锡新区新梅路68号
∟ 功率三极管(87)∟ 开关三极管(2)∟ 低噪声三极管(74)∟ 复合(达林顿)三极管(6)∟ 其他三极管(3)
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -70V(Min.)
·LowCollector Saturation Voltage-
: VCE(sat)= -1.5V(Max.)@ IC= -5A
·Good Linearity of hFE
APPLICATIONS
·Audio frequency power amplifier and low speed switching
·Suitable for output stages of 30 ~50 watts audio amplifier
and DC-DC converter.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL | PARAMETER | VALUE | UNIT |
VCBO | Collector-Base Voltage | -80 | V |
VCEO | Collector-Emitter Voltage | -70 | V |
VEBO | Emitter-Base Voltage | -5 | V |
IC | Collector Current-Continuous | -6 | A |
ICM | Collector Current-Peak | -10 | A |
PC | Collector Power Dissipation @TC=25℃ | 60 | W |
TJ | Junction Temperature | 150 | ℃ |
Tstg | Storage Temperature | -65~+150 | ℃ |
ELECTRICAL CHARACTERISTICS
Tj=25℃unless otherwise specified
SYMBOL | PARAMETER | CONDITIONS | MIN | TYP. | MAX | UNIT |
VCE(sat) | Collector-Emitter Saturation Voltage | IC= -5A; IB= -0.5A |
|
| -1.5 | V |
VBE(sat) | Base-Emitter Saturation Voltage | IC= -5A; IB= -0.5A |
|
| -1.5 | V |
ICBO | Collector Cutoff Current | VCB= -70V; IE= 0 |
|
| -0.1 | mA |
IEBO | Emitter Cutoff Current | VEB= -3V; IC= 0 |
|
| -0.5 | mA |
hFE | DC Current Gain | IC= -2A; VCE= -5V | 30 |
| 120 |
|
COB | Output Capacitance | IE= 0; VCB= -10V; f= 1MHz |
| 300 |
| pF |
fT | Current-Gain—Bandwidth Product | IC= -0.2A; VCE= -10V |
| 10 |
| MHz |
u hFEClassifications
W | M | L |
30-60 | 45-90 | 60-120 |
"
企业名:无锡固电半导体股份有限公司
类型:生产制造商
电话: 0510-85346300
手机:15961889150
联系人:刘玲玲
微信:
邮箱:mdc@iscsemi.com
地址:江苏无锡无锡新区新梅路68号