无锡固电ISC供应2SD1669三极管

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商品信息 更新时间：2013-01-28

DESCRIPTION

·Collector-Emitter Breakdown Voltage-

: V_(BR)CEO= 50V(Min)

·Low Collector Saturation Voltage-

: V_CE(sat)= 0.4V(Max.)

·Wide Area of Safe Operation

·Complement to Type 2SB1136

APPLICATIONS

·Designed for relay drivers,high speed inverters,converters

and other general high current switching applications.

ABSOLUTE MAXIMUM RATINGS(T_a=25℃)

SYMBOL	PARAMETER	VALUE	UNIT
V_CBO	Collector-Base Voltage	60	V
V_CEO	Collector-Emitter Voltage	50	V
V_EBO	Emitter-Base Voltage	6	V
I_C	Collector Current-Continuous	12	A
I_CM	Collector Current-Peak	15	A
P_C	Collector Power Dissipation @T_a=25℃	2	W
P_C	Collector Power Dissipation @T_C=25℃	30	W
T_J	Junction Temperature	150	℃
T_stg	Storage Temperature	-55~150	℃

ELECTRICAL CHARACTERISTICS

Tj=25℃unless otherwise specified

SYMBOL	PARAMETER	CONDITIONS	MIN	TYP.	MAX	UNIT
V_(BR)CEO	Collector-Emitter Breakdown Voltage	I_C= 1 mA; R_BE=∞	50			V
V_(BR)CBO	Collector-BaseBreakdownVoltage	I_C= 1mA; I_E= 0	60			V
V_(BR)EBO	Emitter-BaseBreakdownVoltage	I_E= 1mA; I_C= 0	6			V
V_CE_(sat)	Collector-Emitter Saturation Voltage	I_C= 6A; I_B= 0.6A			0.4	V
I_CBO	Collector Cutoff Current	V_CB= 40V ; I_E= 0			100	μA
I_EBO	Emitter Cutoff Current	V_EB= 4V; I_C= 0			100	μA
h_FE-1	DC Current Gain	I_C= 1A; V_CE= 2V	70		280
h_FE-2	DC Current Gain	I_C= 5A; V_CE= 2V	30
f_T	Current-Gain—Bandwidth Product	I_C= 1A; V_CE= 5V		10		MHz
Switching Times
t_on	Turn-On Time	I_C= 2A, I_B1= -I_B2= 0.2A; R_L= 4Ω; V_CC= 20V		0.1		μs
t_stg	Storage Time			1.2		μs
t_f	Fall Time			0.05		μs