富士通铁电存储器 *85R256HPF-G-BND-ERAE1

型号/规格：
*85R256HPF-G-BND-ERAE1
品牌/商标：
FUJITSU

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商品信息

*原厂原装无铅现货，11+，1000/盘，可替代FM18L08-70-SGTR或*8V020-SGTR

The *85R256HPF-G-BND-ERAE1 is an FRAM (Ferroelectric Random Access Memory) chip in a configuration of 32,768 words * 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile memory cells. Unlike SRAM, the *85R256HPF-G-BND-ERAE1 is able to retain data without back-up battery. The memory cells used for the device has improved at least 1010 times of read/write access per bit, significantly outperforming FLASH memory and E2PROM in durability. The *85R256HPF-G-BND-ERAE1 uses a pseudo - SRAM interface compatible with conventional asynchronous SRAM.

Parametrics

*85R256HPF-G-BND-ERAE1 absolute maximum ratings: (1)Power supply voltage:-0.5V to +4.0V; (2)Input voltage:-0.5V to VCC +0.5V; (3)Output voltage:-0.5V to VCC +0.5V; (4)Operating temperature:-40℃ to +85℃; (5)Storage temperature:-40℃ to +125℃.

Features

*85R256HPF-G-BND-ERAE1 features: (1)Bit configuration: 32,768 words x 8 bits; (2)Read/write durability: 1010 times/bit (Min) ; (3)Peripheral circuit CMOS construction; (4)Operating power supply voltage: 2.7 V to 3.6 V; (5)Operating temperature range: -40℃ to +85℃; (6)28-pin, SOP flat package; (7)28-pin, TSOP flat package.