国产
S9013
放大
*率
低频
PNP型
点接触型
硅(Si)
直插型
塑料封装
*
*
企业名：深圳市晶泰达电子有限公司
类型：生产加工
电话： 0755-29769280
联系人：杨斌
地址：广东深圳82区华美居B区416
*，三*管9013，TO-92，欢迎来电咨询。
ELE*RICAL CHARA*ERISTICS(Tamb=25℃unless otherwise specified)
Parameter | Symbol | Test conditions | MIN | TYP | MAX | UNIT |
Collector-base breakdown voltage | V(BR)CBO | lc=100μA, lE=0 | 40 |
|
| V |
Collector-emitter breakdown voltage | V(BR)CEO | lc=1mA, lB=0 | 25 |
|
| V |
Emitter-base breakdown voltage | V(BR)EBO | lE=100μA,lc=0 | 5 |
|
| V |
Collector cut-off current | lCBO | VCB=40V, lE=0 |
|
| 0.1 | μA |
Collector cut-off current | lCEO | VCE=20V, lE=0 |
|
| 1 | μA |
Emitter cut-off current | lEBO | VEB=5V, lc=0 |
|
| 0.1 | μA |
DC current gain | hFE | VCE=1V,lc=50mA | 64 |
| 400 |
|
Collector-emitter saturation voltage | VCE(sat) | lc=500mA,lB=-50mA |
|
| 0.6 | V |
Base-emitter saturation voltage | VBE(sat) | lc=500mA,lB=50mA |
|
| 1.2 | V |
Transition frequency | fT | VCE=6V,lc=20mA f=30MHZ | 150 | 180 |
| MHZ |
CLASSIFICATION OF hFE(1)
Rank | D | E | F | G | H | I | J |
Range | 64-91 | 78-112 | 96-135 | 112-166 | 144-202 | 190-300 | 300-400 |
友情链接： 深圳市元东发电子有限公司
