IXY美国电报半导体
IXTQ80N28T
结型(JFET)
N沟道
耗尽型
MOS-TPBM/三相桥
CER-DIP/陶瓷直插
GaAS-FET砷化镓
22(V)
22(V)
22(μS)
22(pF)
类型:经销商
电话:
联系人:陈义伟
地址:广东深圳中国 广东 深圳市福田区 华强三店3A132(佳和大厦)
∟ 结型场效应管(267)
IXYS*原装*场效应管IXTQ80N28T
IXYS*原装*场效应管IXTQ80N28T
IXTQ80N28T产品规格 参数 PDF
Datasheets IXTQ80N28T
Standard Package 30
Category Discrete Semiconductor Products
Family FETs - Single
Series -
FET T*e MOSFET N-Channel, Metal Oxide
FET Feature Standard
Drain to Source Voltage (Vdss) 280V
Current - Continuous Drain (Id) @ 25° C 80A
Rds On (Max) @ Id, Vgs 49 mOhm @ 500mA, 10V
Vgs(th) (Max) @ Id 5V @ 1mA
Gate Charge (Qg) @ Vgs 115nC @ 10V
Input Capacitance (Ciss) @ Vds 5000pF @ 25V
Power - Max 500W
Mounting T*e Through Hole
Package / Case TO-*-3, SC-65-3
Supplier Device Package TO-*
Packaging Tube
友情链接: 深圳市元东发电子有限公司