Tamb=25 unless otherwise specified
Parameter Symbol Test conditions MIN TYP MAX UNIT
Collector-base breakdown voltage V(BR)CBO Ic= 1000 A IE=0 700 V
Collector-emitter breakdown voltage V(BR)CEO Ic= 10 mA IB=0 400 V
Emitter-base breakdown voltage V(BR)EBO IE= 1000 A IC=0 9 V
Collector cut-off current ICBO VCB= 700 V IE=0 1000 μA
Collector cut-off current ICEO VCE= 400 V IB=0 500 μA
Emitter cut-off current IEBO VEB= 9 V IC=0 1000 μA
HFE 1 VCE= 10 V, IC= 150 mA 8 40
DC current gain(note)
HFE 2 VCE= 10 V, IC= 0.5 mA 5
Collector-emitter saturation voltage VCE(sat) IC=1000mA,IB= 250 mA 1 V
Base-emitter saturation voltage VBE(sat) IC=1000mA, IB= 250mA 1.2 V
Base-emitter voltage VBE IE= 2000 mA 3 V
Transition frequency fT
VCE=10V,Ic=100mA
f =1MHz 5 MHz
Fall time tf 0.5 μs
Storage time ts
IC=1A, IB1=-IB2=0.2A
VCC=100V 2.5 μs"

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