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NCE N-Channel Enhancement Mode Power MOSFET Product Summary BVDSS typ. 84 V RDS(ON) typ. 6.8 mΩ max. 8.5 mΩ ID 60 A General Description The NCE7560K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. Features ● VDS=75V；ID=60A@ VGS=10V； RDS(ON)<8.5mΩ @ VGS=10V ● Special process technology for high ESD capability ● Special designed for Convertors and power controls ● High density cell design for ultra low Rdson ● Fully characterized Avalanche voltage and current ● Good stability and uniformity with high EAS ● Excellent package for good heat dissipation Application ● Power switching application ● Hard Switched and High Frequency Circuits ● Uninterruptible Power Supply 100% UIS TESTED! TO-252-2L top view Schematic diagram Package Marking and Ordering Information Device Marking Device Device Package Reel Size Tape width Quantity NCE7560K NCE7560K TO-252-2L - - - 

Table 1. Absolute Maximum Ratings (TC=25℃) Parameter Symbol Value Unit Drain-Source Voltage (VGS=0V） VDS 75 V Gate-Source Voltage (VDS=0V) VGS ±20 V Drain Current (DC) at Tc=25℃ ID (DC) 60 A Drain Current (DC) at Tc=100℃ ID (DC) 42 A Drain Current-Continuous@ Current-Pulsed (Note 1) IDM (pluse) 310 A Peak diode recovery voltage dv/dt 30 V/ns Maximum Power Dissipation(Tc=25℃) PD 140 W Derating factor 0.95 W/℃ Single pulse avalanche energy (Note 2) EAS 300 mJ Operating Junction and Storage Temperature Range TJ,TSTG -55 To 175 ℃

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