General Description

The AO4842 uses advanced trench technology to

provide excellent RDS(ON) and low gate charge. The

two MOSFETs make a compact and efficient switch

and synchronous rectifier combination for use in

buck converters

Product Summary

VDS (V) = 30V

ID = 7.7A (VGS = 10V)

RDS(ON) < 21mΩ (VGS = 10V)

RDS(ON) < 30mΩ (VGS = 4.5V)

100% UIS Tested

100% Rg Tested

Symbol Min Typ Max Units

BVDSS 30 V

0.004 1

TJ=55°C 5

IGSS 100 nA

VGS(th) 1.5 2.1 2.6 V

ID(ON) 64 A

16.8 21

TJ=125°C 24 29

23.4 30 mΩ

gFS 20 S

VSD 0.75 1 V

IS 2.4 A

Ciss 373 448 pF

Coss 67 pF

Crss 41 pF

Rg 1.8 2.8 Ω

Qg

(10V) 7.2 11 nC

Qg

(4.5V) 3.5 nC

Qgs 1.3 nC

Qgd 1.7 nC

tD(on) 4.5 ns

DYNAMIC PARAMETERS

VGS=10V, VDS=15V, ID=7.7A

Total Gate Charge

Gate Drain Charge

VGS=0V, VDS=15V, f=1MHz

SWITCHING PARAMETERS

Gate resistance VGS=0V, VDS=0V, f=1MHz

Input Capacitance

Output Capacitance

Total Gate Charge

Gate Source Charge

Turn-On DelayTime

mΩ

VGS=4.5V, ID=5A

IS=1A,VGS=0V

VDS=5V, ID=7.7A

Maximum Body-Diode Continuous Current

RDS(ON) Static Drain-Source On-Resistance

Forward Transconductance

Diode Forward Voltage

IDSS μA

Gate Threshold Voltage VDS=VGS ID=250μA

VDS=30V, VGS=0V

VDS=0V, VGS= ±20V

Zero Gate Voltage Drain Current

Gate-Body leakage current

Electrical Characteristics (TJ=25°C unless otherwise noted)

STATIC PARAMETERS

Parameter Conditions

Drain-Source Breakdown

企业名：深圳市冠亚通电子科技有限公司

类型：贸易/代理/分销

电话： 0755-82584853

手机：13692104516

联系人：易小姐 辛先生 兰先生 周先生

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邮箱：szguanyatong88@163.com

地址：广东深圳深圳市福田区华强北路深纺大厦A座903