NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings TC=25°C unless otherwise noted
* PW≤300μs, Duty Cycle≤10%
Electrical Characteristics TC=25°C unless otherwise noted
* Pulse Test: PW≤350μs, Duty Cycle≤2%Pulsed
hFE Cl*ification
Symbol Parameter Value Units
VCBO Collector-Base Voltage 150 V
VCEO Collector-Emitter Voltage 100 V
VEBO Emitter-Base Voltage 7 V
IC Collector Current (DC) 7 A
ICP *Collector Current (Pulse) 15 A
IB Base Current (DC) 3.5 A
PC Collector Dissipation (TC=25°C) 40 W
Collector Dissipation (TA=25°C) 1.5 W
TJ Junction Temperature 150 °C
TSTG Storage Temperature - 55 ~ 150 °C
Symbol Parameter Test Condition Min. Max. Units
VCEO(sus) Collector-Emitter Sustaining Voltage IC = 5A, IB1= 0.5A, L = 1mH 100 V
VCEX(sus)1 Collector-Emitter Sustaining Voltage IC = 5A, IB1 = -IB2 = 0.5A
VBE(off) = -5V, L = 180μH, Clamped
100 V
VCEX(sus)2 Collector-Emitter Sustaining Voltage IC = 10A, IB1 =1A, IB2 = -0.5A,
VBE(off) = -5V, L = 180μH, Clamped
100 V
ICBO Collector Cut-off Current VCB = 100, IE = 0 10 μA
ICER Collector Cut-off Current VCE = 100V, RBE =51Ω@TC=125°C 1 mA
ICEX1
ICEX2
Collector Cut-off Current VCE = 100V, VBE(off) = -1.5V
VCE = 100V, VBE(off) = -1.5V
@ TC= 125°C
10
1
μA
mA
IEBO Emitter Cut-off Current VEB = 5V, IC = 0 10 μA
hFE1
hFE2
hFE3
* DC Current Gain VCE = 5V, IC = 0.5A
VCE = 5V, IC = 3A
VCE = 5V, IC = 5A
40
40
20
240
VCE(sat) * Collector-Emitter Saturation Voltage IC = 5A, IB = 0.5A 0.6 V
VBE(sat) * Base-Emitter Saturation Voltage IC = 5A, IB = 0.5A 1.5 V
tON Turn On Time VCC = 50V, IC = 5A
IB1 = -IB2 = 0.5A
RL = 10Ω
0.5 μs
tSTG Storage Time 0.5 μs
tF Fall Time 1.5 μs
Cl*ification R O Y
hFE2 40 ~ 80 70 ~ 140 120 ~ 240
KSC2334

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