是
isc/iscsemi
2SD1654
放大
硅(Si)
NPN型
3.5(A)
50(W)
扩散型
TO-*ML
塑料封装
企业名:无锡固电半导体股份有限公司
类型:生产企业
电话: 0510-85346980
联系人:谈增琴
邮箱:wisca@pub.jsinfo.com
地址:江苏无锡无锡新区新梅路68号
D*CRIPTION
·High Breakdown Voltage-
: VCBO= 1500V (Min)
·High Switching Speed
·High Reliability
APPLICATIONS
·Color TV horizontal deflection output applications.
ELE*RICAL CHARA*ERISTICS
TC=25℃unless otherwise specified
SY*OL | PARAMETER | CONDITIONS | MIN | TYP. | MAX | UNIT |
V(BR)CEO | Collector-Emitter Breakdown Voltage | IC= 100mA; RBE=∞ | 800 |
|
| V |
V(BR)CBO | Collector-Base Breakdown Voltage | IC= 5mA; IE= 0 | 1500 |
|
| V |
V(BR)EBO | Emitter-Base Breakdown Voltage | IE= 200mA; IC= 0 | 7 |
|
| V |
VCE(sat) | Collector-Emitter Saturation Voltage | IC= 2.5A; IB= 0.8A |
|
| 8.0 | V |
VBE(sat) | Base-Emitter Saturation Voltage | IC= 2.5A; IB= 0.8A |
|
| 1.5 | V |
ICBO | Collector Cutoff Current | VCB= 800V ; IE= 0 |
|
| 10 | μA |
IEBO | Emitter Cutoff Current | VEB= 5V; IC= 0 |
|
| 1.0 | mA |
hFE | DC Current Gain | IC= 0.5A; VCE= 5V | 8 |
|
|
|
tf | Fall Time | IC= 3A, IB1= 0.8A; IB2= -1.6A |
|
| 0.7 | μs |
友情链接: 深圳市元东发电子有限公司