无锡固电ISC 供应BD912 三管达林顿三管增强型MOS管

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供应BD912三*管TO-220,有意者请联系！

D*CRIPTION

·DC Current Gain -

: h_FE= 40@I_C= -0.5A

·Collector-Emitter Sustaining Voltage-

: V_CEO(SUS)= -100V(Min)

·Complement to T*e BD911

APPLICATIONS

·Designed for use in general purpose power amplifier and

switching applications.

*SYOL**	PARAMETER	VALUE	UNIT
V_CBO	Collector-Base Voltage	-100	V
V_CEO	Collector-Emitter Voltage	-100	V
V_EBO	Emitter-Base Voltage	-5	V
I_C	Collector Current-Continuous	-15	A
I_CM	Collector Current-Peak	-20	A
I_B	Base Current	-5	A
P_C	Collector Power Dissipation @ T_C=25℃	90	W
T_J	JunctionTemperature	150	℃
T_stg	StorageTemperature Range	-65~150	℃

ELE*RICAL CHARA*ERISTICS

T_C=25℃unless otherwise specified

*SYOL**	PARAMETER	CONDITIONS	MIN	MAX	UNIT
V_CEO(SUS)	Collector-Emitter Sustaining Voltage	I_C= -50mA ;I_B= 0	-100		V
V_CE(sat)-1	Collector-Emitter Saturation Voltage	I_C= -5A; I_B= -0.5A		-1.0	V
V_CE(sat)-2	Collector-Emitter Saturation Voltage	I_C= -10A; I_B= -2.5A		-3.0	V
V_BE(sat)	Base-Emitter Saturation Voltage	I_C= -10A; I_B= -2.5A		-2.5	V
V_BE(_on₎	Base-Emitter On Voltage	I_C= -5A ; V_CE= -4V		-1.5	V
I_CBO	Collector Cutoff Current	V_CB= -100V;I_E= 0		-0.5	mA
I_CEO	Collector Cutoff Current	V_CE= -50V;I_B= 0		-1.0	mA
I_EBO	Emitter Cutoff Current	V_EB= -5V; I_C= 0		-1.0	mA
h_FE-1	DC Current Gain	I_C= -0.5A ; V_CE= -4V	40	250
h_FE-2	DC Current Gain	I_C= -5A ; V_CE= -4V	15	150
h_FE-3	DC Current Gain	I_C= -10A ; V_CE= -4V	5
f_T	Current-Gain—Bandwidth Product	I_C= -0.5A ; V_CE= -4V; f_test= 1.0MHz	3.0		MHz