无锡固电ISC供应2S689三管

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商品信息 更新时间：2012-12-14

D*CRIPTION

·Collector-Emitter Breakdown Voltage-

: V_(BR)CEO= 120V(Min)

·Collector-Emitter Saturation Voltage-

: V_CE(sat)= 2.0V(Max)@ I_C= 6A

·Complement to T*e 2SA1804

APPLICATIONS

·Power amplifier applications

·Recommend for 55W high fidelity audio frequency

amplifier output stage applications

*SYOL**	PARAMETER	VALUE	UNIT
V_CBO	Collector-Base Voltage	120	V
V_CEO	Collector-Emitter Voltage	120	V
V_EBO	Emitter-Base voltage	5	V
I_C	Collector Current-Continuous	8	A
I_CM	Collector Current-Peak	16	A
I_B	Base Current-Continuous	0.8	A
P_C	Collector Power Dissipation @ T_C=25℃	70	W
T_J	JunctionTemperature	150	℃
T_stg	StorageTemperature Range	-55~150	℃

ELE*RICAL CHARA*ERISTICS

T_C=25℃unless otherwise specified

*SYOL**	PARAMETER	CONDITIONS	MIN	TYP.	MAX	UNIT
V_(BR)CEO	Collector-Emitter Breakdown Voltage	I_C= 50mA; I_B= 0	120			V
V_CE_(sat)	Collector-Emitter Saturation Voltage	I_C= 6A; I_B= 0.6A			2.0	V
V_BE(_on₎	Base-Emitter On Voltage	I_C= 4A; V_CE= 5V			1.5	V
I_CBO	Collector Cutoff Current	V_CB= 120V; I_E= 0			5.0	μA
I_EBO	Emitter Cutoff Current	V_EB= 5V; I_C= 0			5.0	μA
h_FE-1	DC Current Gain	I_C= 1A; V_CE= 5V	55		160
h_FE-2	DC Current Gain	I_C= 4A; V_CE= 5V	35
f_T	Current-Gain—Bandwidth Product	I_C= 1A; V_CE= 5V		30		MHz
C_OB	Output Capacitance	I_E= 0; V_CB= 10V, f_test= 1MHz		190		pF