无锡固电ISC

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D*CRIPTION

·Excellent Safe Operating Area

·DC Current Gain-h_FE= 25(Min.)@I_C= -5A

·Collector-Emitter Saturation Voltage-

: V_CE(sat)= -1.0 V(Max)@ I_C= -8A

·Complement to T*e BD317

APPLICATIONS

·Designed for high quality amplifiers operating up to 100 watts

into 8 ohm load.

ABSOLUTE MAXIMUM RATINGS(T_a=25℃)

*SYOL**	PARAMETER	VALUE	UNIT
V_CBO	Collector-Base Voltage	-100	V
V_CEO	Collector-Emitter Voltage	-100	V
V_EBO	Emitter-Base Voltage	-7	V
I_C	Collector Current-Continuous	-16	A
I_CM	Collector Current-Peak	-20	A
I_B	Base Current-Continuous	-5	A
P_C	Collector Power Dissipation@T_C=25℃	200	W
T_J	Junction Temperature	200	℃
T_stg	Storage Temperature	-65~200	℃

THERMAL CHARA*ERISTICS

*SYOL**	PARAMETER	MAX	UNIT
R_{th j-c}	Thermal Resistance,Junction to Case	0.875	℃/W

ELE*RICAL CHARA*ERISTICS

T_C=25℃unless otherwise specified

*SYOL**	PARAMETER	CONDITIONS	MIN	MAX	UNIT
V_CEO(SUS)	Collector-Emitter Sustaining Voltage	I_C=-200mA; I_B=0	-100		V
V_CE_(sat)	Collector-Emitter Saturation Voltage	I_C= -8A; I_B= -0.8A		-1.0	V
V_BE_(sat)	Base-Emitter Saturation Voltage	I_C= -8A; I_B= -0.8A		-1.8	V
V_BE(_on₎	Base-Emitter On Voltage	I_C= -8A; V_CE= -2V		-1.5	V
I_CBO	Collector Cutoff Current	V_CB= -80V; I_B= 0		-1.0	mA
I_EBO	Emitter Cutoff Current	V_EB= -7V; I_C= 0		-1.0	mA
h_FE-1	DC Current Gain	I_C= -5A; V_CE= -4V	25
h_FE-2	DC Current Gain	I_C= -10A; V_CE= -4V	15
f_T	Current Gain-Bandwidth Product	I_C= -1A; V_CE= -20V	1		MHz