是
ISC
2SD428
放大
硅(Si)
NPN型
平面型
直插型
金属封装
企业名：无锡固电半导体股份有限公司
类型：生产企业
电话： 0510-85346980
联系人：谈增琴
QQ： 
邮箱：wisca@pub.jsinfo.com
地址：江苏无锡无锡新区新梅路68号
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 100V(Min)
·High Power Dissipation-
: PC= 60W(Max)@TC=25℃
·Complement to T*e 2*558
APPLICATIONS
·Designed for power amplifier applications.
·Recommended for 40W high-fidelity audio frequency
amplifier output stage.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SY*OL | PARAMETER | VALUE | UNIT |
VCBO | Collector-Base Voltage | 100 | V |
VCEO | Collector-Emitter Voltage | 100 | V |
VEBO | Emitter-Base Voltage | 5 | V |
IC | Collector Current-Continuous | 7 | A |
IE | Emitter Current-Continuous | -7 | A |
PC | Collector Power Dissipation @TC=25℃ | 60 | W |
TJ | Junction Temperature | 150 | ℃ |
Tstg | Storage Temperature | -65~150 | ℃ |
ELE*RICAL CHARA*ERISTICS
Tj=25℃unless otherwise specified
SY*OL | PARAMETER | CONDITIONS | MIN | TYP. | MAX | UNIT |
V(BR)CEO | Collector-Emitter Breakdown Voltage | IC= 0.1A; IB= 0 | 100 |
|
| V |
V(BR)EBO | Emitter-BaseBreakdownVoltage | IE= 10mA; IC= 0 | 5 |
|
| V |
VCE(sat) | Collector-Emitter Saturation Voltage | IC= 5A; IB= 0.5A |
|
| 2.5 | V |
VBE(on) | Base-Emitter On Voltage | IC= 5A; VCE= 5V |
|
| 2.0 | V |
ICBO | Collector Cutoff Current | VCB= 50V; IE= 0 |
|
| 0.1 | mA |
IEBO | Emitter Cutoff Current | VEB= 5V; IC= 0 |
|
| 0.1 | mA |
hFE-1 | DC Current Gain | IC= 1A; VCE= 5V | 40 |
| 140 |
|
hFE-2 | DC Current Gain | IC= 5A; VCE= 5V | 15 |
|
|
|
COB | Output Capacitance | IE= 0; VCB= 10V; f= 1MHz |
| 140 |
| pF |
fT | Current-Gain—Bandwidth Product | IC= 1A; VCE= 5V |
| 7 |
| MHz |
u hFE-1Cl*ifications
R | O |
40-80 | 70-140 |
友情链接： 深圳市元东发电子有限公司
