是
ISC
2SA1063
放大
硅(Si)
PNP型
平面型
直插型
金属封装
企业名：无锡固电半导体股份有限公司
类型：生产企业
电话： 0510-85346980
联系人：谈增琴
QQ： 
邮箱：wisca@pub.jsinfo.com
地址：江苏无锡无锡新区新梅路68号
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -120V(Min.)
·Good Linearity of hFE
·WideArea of Safe Operation
·Complement to T*e 2SC2487
APPLICATIONS
·Designed for AF amplifier, high power amplifier applications.
SY*OL | PARAMETER | VALUE | UNIT |
VCBO | Collector-Base Voltage | -150 | V |
VCEO | Collector-Emitter Voltage | -120 | V |
VEBO | Emitter-Base Voltage | -5 | V |
IC | Collector Current-Continuous | -6 | A |
PC | Collector Power Dissipation @TC=25℃ | 80 | W |
Tj | Junction Temperature | 150 | ℃ |
Tstg | Storage Temperature | -65~150 | ℃ |
ELE*RICAL CHARA*ERISTICS
Tj=25℃unless otherwise specified
SY*OL | PARAMETER | CONDITIONS | MIN | TYP. | MAX | UNIT |
V(BR)CEO | Collector-Emitter Breakdown Voltage | IC= -100mA; IB= 0 | -120 |
|
| V |
VCE(sat) | Collector-Emitter Saturation Voltage | IC= -6A; IB= -0.6A |
|
| -2.0 | V |
VBE(on) | Base-Emitter On Voltage | IC= -6A ; VCE= -5V |
|
| -2.5 | V |
ICBO | Collector Cutoff Current | VCB= -70V; IE= 0 |
|
| -1 | mA |
IEBO | Emitter Cutoff Current | VEB= -5V; IC= 0 |
|
| -2 | mA |
hFE-1 | DC Current Gain | IC= -1A ; VCE= -5V | 40 |
| 280 |
|
hFE-2 | DC Current Gain | IC= -6A ; VCE= -5V | 20 |
|
|
|
fT | Current-Gain—Bandwidth Product | IC= -0.5A ; VCE= -10V |
| 50 |
| MHz |
u hFE-2Cl*ifications
R | Q | P | O |
40-80 | 60-120 | 90-180 | 140-280 |
友情链接： 深圳市元东发电子有限公司
