是
ISC
MJ11015
达林顿
硅(Si)
PNP型
-30（A）
200（W）
平面型
直插型
塑料封装
企业名：无锡固电半导体股份有限公司
类型：生产企业
电话： 0510-85346980
联系人：谈增琴
QQ： 
邮箱：wisca@pub.jsinfo.com
地址：江苏无锡无锡新区新梅路68号
D*CRIPTION
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -120V(Min.)
·High DC Current Gain-
: hFE= 1000(Min.)@IC= -20A
·LowCollector Saturation Voltage-
: VCE (sat)= -3.0V(Max.)@IC= -20A
·Complement to T*e MJ11016
APPLICATIONS
·Designed for use as output devices in complementary
general purpose amplifier applications.
SY*OL | PARAMETER | VALUE | UNIT |
VCBO | Collector-Base Voltage | -120 | V |
VCEO | Collector-Emitter Voltage | -120 | V |
VEBO | Emitter-Base Voltage | -5 | V |
IC | Collector Current-Continunous | -30 | A |
IB | Base Current-Continunous | -1 | A |
PC | Collector Power Dissipation @TC=25℃ | 200 | W |
Tj | Junction Temperature | 200 | ℃ |
Tstg | StorageTemperature Range | -55~+200 | ℃ |
ELE*RICAL CHARA*ERISTICS
TC=25℃unless otherwise specified
SY*OL | PARAMETER | CONDITIONS | MIN | TYP. | MAX | UNIT |
V(BR)CEO | Collector-Emitter Breakdown Voltage | IC= -0.1A; IB= 0 | -120 |
|
| V |
VCE(sat)-1 | Collector-Emitter Saturation Voltage | IC= -20A; IB= -0.2A |
|
| -3.0 | V |
VCE(sat)-2 | Collector-Emitter Saturation Voltage | IC= -30A; IB= -0.3A |
|
| -4.0 | V |
VBE(sat)-1 | Base-Emitter Saturation Voltage | IC= -20A; IB= -0.2A |
|
| -3.5 | V |
VBE(sat)-2 | Base-Emitter Saturation Voltage | IC= -30A; IB= -0.3A |
|
| -5.0 | V |
ICER | Collector Cutoff Current | VCE=-120V; RBE=1kΩ VCE=-120V; RBE=1kΩ; TC=150℃ |
|
| -1.0 -5.0 | mA |
ICEO | Collector Cutoff Current | VCE= -50V; IB= 0 |
|
| -1.0 | mA |
IEBO | Emitter Cutoff Current | VEB= -5V; IC= 0 |
|
| -5.0 | mA |
hFE-1 | DC Current Gain | IC= -20A, VCE= -5V | 1000 |
|
|
|
hFE-2 | DC Current Gain | IC= -30A, VCE= -5V | 200 |
|
|
|
友情链接： 深圳市元东发电子有限公司
