是
ISC
2*778
放大
硅(Si)
PNP型
平面型
直插型
塑料封装
企业名：无锡固电半导体股份有限公司
类型：生产企业
电话： 0510-85346980
联系人：谈增琴
QQ： 
邮箱：wisca@pub.jsinfo.com
地址：江苏无锡无锡新区新梅路68号
D*CRIPTION
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -120V(Min)
·Good Linearity of hFE
·Complement to T*e 2SD998
APPLICATIONS
·High power amplifier applications
·Recommend for 45-50W audio frequency amplifier
output stage applications
SY*OL | PARAMETER | VALUE | UNIT |
VCBO | Collector-Base Voltage | -120 | V |
VCEO | Collector-Emitter Voltage | -120 | V |
VEBO | Emitter-Base Voltage | -5 | V |
IC | Collector Current-Continuous | -10 | A |
IB | Base Current-Continuous | -1 | A |
PC | Collector Power Dissipation @ TC=25℃ | 80 | W |
TJ | JunctionTemperature | 150 | ℃ |
Tstg | StorageTemperature Range | -55~150 | ℃ |
ELE*RICAL CHARA*ERISTICS
TC=25℃unless otherwise specified
SY*OL | PARAMETER | CONDITIONS | MIN | TYP. | MAX | UNIT |
V(BR)CEO | Collector-Emitter Breakdown Voltage | IC= -50mA ; IB= 0 | -120 |
| V | |
VCE(sat) | Collector-Emitter Saturation Voltage | IC= -5.0A; IB= -0.5A |
|
| -2.5 | V |
VBE(on) | Base-Emitter On Voltage | IC= -5A ; VCE= -5V |
|
| -1.5 | V |
ICBO | Collector Cutoff Current | VCB= -120V ; IE=0 |
|
| -10 | μA |
IEBO | Emitter Cutoff Current | VEB= -5V; IC=0 |
|
| -10 | μA |
hFE | DC Current Gain | IC= -1A ; VCE= -5V | 55 |
| 160 |
|
COB | Output Capacitance | IE=0 ; VCB= -10V;ftest= 1.0MHz |
| 280 |
| pF |
fT | Current-Gain—Bandwidth Product | IC=-1A ; VCE= -5V |
| 10 |
| MHz |
u hFECl*ifications
R | O |
55-110 | 80-160 |
友情链接： 深圳市元东发电子有限公司
