是
ISC
2SA473
放大
硅(Si)
PNP型
平面型
直插型
塑料封装
企业名：无锡固电半导体股份有限公司
类型：生产企业
电话： 0510-85346980
联系人：谈增琴
QQ： 
邮箱：wisca@pub.jsinfo.com
地址：江苏无锡无锡新区新梅路68号
·Collector-Emitter Breakdown Voltage
: V(BR)CEO= -30V(Min)
·Good Linearity of hFE
·Complement to T*e 2SC1173
APPLICATIONS
·Power amplifier applications.
·Car radio and car stereo output stage applications.
SY*OL | PARAMETER | VALUE | UNIT |
VCBO | Collector-Base Voltage | -30 | V |
VCEO | Collector-Emitter Voltage | -30 | V |
VEBO | Emitter-Base Voltage | -5 | V |
IC | Collector Current-Continuous | -3 | A |
IE | Emitter Current-Continuous | -3.0 | A |
PC | Total Power Dissipation @ TC=25℃ | 10 | W |
TJ | JunctionTemperature | 150 | ℃ |
Tstg | StorageTemperature Range | -55~150 | ℃ |
ELE*RICAL CHARA*ERISTICS
TC=25℃unless otherwise specified
SY*OL | PARAMETER | CONDITIONS | MIN | TYP. | MAX | UNIT |
V(BR)CEO | Collector-Emitter Breakdown Voltage | IC= -10 mA; IB= 0 | -30 |
|
| V |
V(BR)EBO | Emitter-BaseBreakdownVoltage | IE= -1mA; IC= 0 | -5 |
|
| V |
VCE(sat) | Collector-Emitter Saturation Voltage | IC= -2A; IB= -0.2A |
|
| -0.8 | V |
VBE(on) | Base-Emitter On Voltage | IC= -0.5A; VCE= -2V |
|
| -1.0 | V |
ICBO | Collector Cutoff Current | VCB= -20V; IE= 0 |
|
| -1.0 | μA |
IEBO | Emitter Cutoff Current | VEB= -5V; IC= 0 |
|
| -1.0 | μA |
hFE-1 | DC Current Gain | IC= -0.5A; VCE= -2V | 70 |
| 240 |
|
hFE-2 | DC Current Gain | IC= -2.5A; VCE= -2V | 25 |
|
|
|
COB | Collector Output Capacitance | IE= 0; VCB= -10V; f= 1MHz |
| 40 |
| pF |
fT | Current-Gain—Bandwidth Product | IE= 0.5A; VCE= -2V |
| 100 |
| MHz |
u hFE-1Cl*ifications
O | Y |
70-140 | 120-240 |
友情链接： 深圳市元东发电子有限公司
