SY*OL

PARAMETER

VALUE

UNIT

V_CBO

Collector-Base Voltage                     

-160

V

V_CEO

Collector-Emitter Voltage                        

-140

V

V_EBO

Emitter-Base Voltage

-6

V

I_C

Collector Current-Continuous

-12

A

I_CP

Collector Current-Pulse

-15

A

P_C

Collector Power Dissipation

@ T_C=25℃

100

W

T_J

JunctionTemperature

150

℃

T_stg

StorageTemperature Range

-40~150

℃

SY*OL

PARAMETER

CONDITIONS

MIN

TYP.

MAX

UNIT

V_(BR)CEO

Collector-Emitter Breakdown Voltage

I_C= -50mA ; R_BE=∞

-140

V

V_(BR)CBO

Collector-BaseBreakdownVoltage                     

I_C= -5mA; I_E= 0

-160

V

V_(BR)EBO

Emitter-BaseBreakdownVoltage

I_E= -5mA; I_C= 0

-6

V

V_CE(sat)

Collector-Emitter Saturation Voltage

I_C= -5.0A; I_B= -0.5A

-2.5

V

V_BE(on)

Base-Emitter On Voltage

I_C= -1A ; V_CE= -5V

-1.5

V

I_CBO

Collector Cutoff Current

V_CB= -80V ; I_E=0

-100

μA

I_EBO

Emitter Cutoff Current

V_EB= -4V; I_C=0

-100

μA

h_FE-1

DC Current Gain

I_C= -1A ; V_CE= -5V

60

200

h_FE-2

DC Current Gain

I_C= -6A ; V_CE= -5V

20

C_OB

Output Capacitance

I_E=0 ; V_CB= -10V;f_test= 1.0MHz

300

pF

f_T

Current-Gain—Bandwidth Product

I_C=-1A ; V_CE= -5V

15

MHz

Switching times

t_on

Turn-on Time

I_C= -1A ,R_L= 20Ω,

I_B1= -I_B2= -0.1A,V_CC=-20V

0.25

μs

t_stg

Storage Time

1.61

μs

t_f

Fall Time

0.53

μs

D

E

60-120

100-200