是
ISC
BD317
放大
硅(Si)
NPN型
平面型
直插型
金属封装
企业名：无锡固电半导体股份有限公司
类型：生产企业
电话： 0510-85346980
联系人：谈增琴
QQ： 
邮箱：wisca@pub.jsinfo.com
地址：江苏无锡无锡新区新梅路68号
D*CRIPTION
·Excellent Safe Operating Area
·DC Current Gain-hFE= 25(Min.)@IC= 5A
·Collector-Emitter Saturation Voltage-
: VCE(sat)= 1.0 V(Max)@ IC= 8A
·Complement to T*e BD318
APPLICATIONS
·Designed for high quality amplifiers operating up to 100 watts
into 8 ohm load.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SY*OL | PARAMETER | VALUE | UNIT |
VCBO | Collector-Base Voltage | 100 | V |
VCEO | Collector-Emitter Voltage | 100 | V |
VEBO | Emitter-Base Voltage | 7 | V |
IC | Collector Current-Continuous | 16 | A |
ICM | Collector Current-Peak | 20 | A |
IB | Base Current-Continuous | 5 | A |
PC | Collector Power Dissipation@TC=25℃ | 200 | W |
TJ | Junction Temperature | 200 | ℃ |
Tstg | Storage Temperature | -65~200 | ℃ |
THERMAL CHARA*ERISTICS
SY*OL | PARAMETER | MAX | UNIT |
Rth j-c | Thermal Resistance,Junction to Case | 0.875 | ℃/W |
ELE*RICAL CHARA*ERISTICS
TC=25℃unless otherwise specified
SY*OL | PARAMETER | CONDITIONS | MIN | MAX | UNIT |
VCEO(SUS) | Collector-Emitter Sustaining Voltage | IC=200mA; IB=0 | 100 | V | |
VCE(sat) | Collector-Emitter Saturation Voltage | IC= 8A; IB= 0.8A |
| 1.0 | V |
VBE(sat) | Base-Emitter Saturation Voltage | IC= 8A; IB= 0.8A |
| 1.8 | V |
VBE(on) | Base-Emitter On Voltage | IC= 8A; VCE= 2V |
| 1.5 | V |
ICBO | Collector Cutoff Current | VCB= 100V; IB=0 |
| 1.0 | mA |
IEBO | Emitter Cutoff Current | VEB= 7V; IC=0 |
| 1.0 | mA |
hFE-1 | DC Current Gain | IC= 5A; VCE= 4V | 25 |
|
|
hFE-2 | DC Current Gain | IC= 10A; VCE= 4V | 15 |
|
|
fT | Current Gain-Bandwidth Product | IC= 1A; VCE= 20V | 1 |
| MHz |
友情链接： 深圳市元东发电子有限公司
