是
iscsemi
2N3447
放大
硅(Si)
N/P型
60(V)
7.5(A)
115(W)
平面型
to-3
金属封装
企业名:无锡固电半导体股份有限公司
类型:生产企业
电话: 0510-85346980
联系人:谈增琴
邮箱:wisca@pub.jsinfo.com
地址:江苏无锡无锡新区新梅路68号
D*CRIPTION
·Excellent Safe Operating Area
·DC Current Gain-hFE= 40-120@ IC= 5A
·Collector-Emitter Saturation Voltage-
: VCE(sat)= 1.5V(Max)@ IC= 5A
·Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= 60V(Min)
APPLICATIONS
·Designed for switching and amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SY*OL | PARAMETER | VALUE | UNIT |
VCBO | Collector-Base Voltage | 80 | V |
VCEO | Collector-Emitter Voltage | 60 | V |
VEBO | Emitter-Base Voltage | 6 | V |
IC | Collector Current-Continuous | 7.5 | A |
IB | Base Current-Continuous | 4 | A |
PC | Collector Power Dissipation@TC=25℃ | 115 | W |
TJ | Junction Temperature | 200 | ℃ |
Tstg | Storage Temperature | -65~200 | ℃ |
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友情链接: 深圳市元东发电子有限公司