是
ISC
2S*278
放大
硅(Si)
NPN型
平面型
直插型
塑料封装
企业名:无锡固电半导体股份有限公司
类型:生产企业
电话: 0510-85346980
联系人:谈增琴
邮箱:wisca@pub.jsinfo.com
地址:江苏无锡无锡新区新梅路68号
·Collector-Emitter Breakdown Voltage-
V(BR)CEO= 150V(Min)
·High Power Dissipation
·High Current Capacity
·Complement to T*e 2SA1633
APPLICATIONS
·For audio and general purpose applications
SY*OL | PARAMETER | VALUE | UNIT |
VCBO | Collector-Base Voltage | 150 | V |
VCEO | Collector-Emitter Voltage | 150 | V |
VEBO | Emitter-Base Voltage | 5 | V |
IC | Collector Current-Continuous | 10 | A |
PC | Collector Power Dissipation @ TC=25℃ | 100 | W |
TJ | JunctionTemperature | 150 | ℃ |
Tstg | StorageTemperature Range | -55~150 | ℃ |
ELE*RICAL CHARA*ERISTICS
TC=25℃unless otherwise specified
SY*OL | PARAMETER | CONDITIONS | MIN | TYP. | MAX | UNIT |
V(BR)CEO | Collector-Emitter Breakdown Voltage | IC= 25mA; IB= 0 | 150 |
| V | |
V(BR)CBO | Collector-BaseBreakdownVoltage | IC= 0.1mA; IE= 0 | 150 |
|
| V |
V(BR)EBO | Emitter-BaseBreakdownVoltage | IE= 0.1mA; IC= 0 | 5 |
|
| V |
VCE(sat) | Collector-Emitter Saturation Voltage | IC= 7A; IB= 0.7A |
|
| 1.0 | V |
ICBO | Collector Cutoff Current | VCB= 150V; IE= 0 |
|
| 5 | μA |
IEBO | Emitter Cutoff Current | VEB= 5V; IC= 0 |
|
| 5 | μA |
hFE | DC Current Gain | IC= 1A; VCE= 5V | 60 |
| 320 |
|
COB | Collector Output Capacitance | IE= 0; VCB= 10V; f= 1MHz |
| 200 |
| pF |
fT | Current-Gain—Bandwidth Product | IE= -1A; VCE= 5V |
| 20 |
| MHz |
u hFECl*ifications
D | E | F |
60-120 | 100-200 | 160-320 |
友情链接: 深圳市元东发电子有限公司