是
ISC
2*509
放大
硅(Si)
PNP型
平面型
直插型
金属封装
企业名：无锡固电半导体股份有限公司
类型：生产企业
电话： 0510-85346980
联系人：谈增琴
QQ： 
邮箱：wisca@pub.jsinfo.com
地址：江苏无锡无锡新区新梅路68号
D*CRIPTION
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -60V(Min)
·LowCollector-Emitter Saturation Voltage-
: VCE(sat)= -1.0V(Max) @IC= -2.0A
·Complement to T*e 2SD315
APPLICATIONS
·Designed for AF power amplifier applications.
SY*OL | PARAMETER | VALUE | UNIT |
VCBO | Collector-Base Voltage | -60 | V |
VCEO | Collector-Emitter Voltage | -60 | V |
VEBO | Emitter-Base Voltage | -5 | V |
IC | Collector Current-Continuous | -4 | A |
ICM | Collector Current-Peak | -10 | A |
PC | Collector Power Dissipation @ TC=25℃ | 35 | W |
TJ | JunctionTemperature | 150 | ℃ |
Tstg | StorageTemperature Range | -40~150 | ℃ |
ELE*RICAL CHARA*ERISTICS
TC=25℃unless otherwise specified
SY*OL | PARAMETER | CONDITIONS | MIN | TYP. | MAX | UNIT |
VCE(sat) | Collector-Emitter Saturation Voltage | IC= -2A; IB= -0.2A |
|
| -1.0 | V |
VBE(on) | Base-Emitter On Voltage | IC= -1A; VCE= -2V |
|
| -1.5 | V |
ICBO | Collector Cutoff Current | VCB= -20V; IE= 0 |
|
| -100 | μA |
IEBO | Emitter Cutoff Current | VEB= -4V; IC= 0 |
|
| -1 | mA |
hFE-1 | DC Current Gain | IC= -1A; VCE= -2V | 40 |
| 320 |
|
hFE-2 | DC Current Gain | IC= -0.1A ; VCE= -2V | 40 |
|
|
|
fT | Current-Gain—Bandwidth Product | IC= -0.5A; VCE= -5V;ftest= 1.0MHz |
| 8 |
| MHz |
u hFE-1Cl*ifications
C | D | E | F |
40-80 | 60-120 | 100-200 | 160-320 |
友情链接： 深圳市元东发电子有限公司
